Vishay Intertechnology, Inc. 30V 25.7A SOIC MOSFET Transistor SI4101DY-T1-GE3

Trans MOSFET P-CH 30V 25.7A 8-Pin SOIC N T/R Product overview: SI4101DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 25.7A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 25.7A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4101DY-T1-GE3 can be used for catalog matching and distributor lookup.

P-Channel 30V 25.7A (Tc) 6W (Tc) Surface Mount 8-SOIC

P-Channel 30V 25.7A (Tc) 6W (Tc) Surface Mount 8-SOIC

P-Channel 30V 25.7A (Tc) 6W (Tc) Surface Mount 8-SOIC

P-Ch MOSFET SO-8 30V 60mohm @ 10V

P-Ch MOSFET SO-8 30V 60mohm @ 10V

P-Ch MOSFET SO-8 30V 60mohm @ 10V

Manufacturer: Vishay Siliconix
Win Source Part Number: 804744-SI4101DY-T1-GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 6W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 6mOhm at 15A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 203nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 8190pF at 15V
Current - Continuous Drain (Id) at 25°C: 25.7A (Tc)
Vgs(th) (Maximum) at Id: 2.5V at 250μA
Maximum Vgs: ±20V