N-Channel 60V 32.1A (Tc) 7.8W (Tc) Surface Mount 8-SOIC
N-Channel 60V 32.1A (Tc) 7.8W (Tc) Surface Mount 8-SOIC
N-Channel 60V 32.1A (Tc) 7.8W (Tc) Surface Mount 8-SOIC
MOSFET 60V 4.2mOhm@10V 32.1A N-CH Product overview: SI4062DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 4.2mOhm, 10V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 4.2mOhm, 10V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4062DY-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 933461-SI4062DY-T1-G
Series: TrenchFET®
Features: N-Channel 60 V 32.1A (Tc) 7.8W (Tc) Surface Mount 8-SOIC
Package: Reel - TR
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: Surface Mount
Family Name: SI4062
Categories: Discrete Semiconductor Products
Case / Package: 8-SOIC
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SI4062DY-T1-GE3TR, SI4062DY-T1-GE3DKR, SI4062DY-T1-GE3CT
MOSFET, N-CH, 60V, 32.1A, 150DEG C, 7.8W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:32.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.6V RoHS Compliant: Yes
MOSFET N-CH 60V 32.1A 8SO
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI4062DY-T1-GE3TR-ND | 278-SI4062DY-T1-GE3 | 933461-SI4062DY-T1-GE3 | SI4062DY-T1-GE3 | 70AC6504 | SI4062DY-T1-GE3 |
| Product Name | Single FETs, MOSFETs | 60V 4.2mOhm 10V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4062DY-T1-GE3 | MOSFET | Mosfet, N-Ch, 60V, 32.1A, 150Deg C, 7.8W; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SOIC | TO-3 | 8-SOIC (0.154, 3.90mm Width) | ||
| PD | 7800 milliwatts |
