N-Channel 100V 5.9A (Ta), 8.3A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
N-Channel 100V 5.9A (Ta), 8.3A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
N-Channel 100V 5.9A (Ta), 8.3A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
Win Source Part Number: 1038537-SI4056ADY-T1
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 8.3A (Tc)
Rds On (Max) @ Id, Vgs: 29.2mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SI4056ADY-T1-GE3
Base Product Number: SI4056
Trans MOSFET N-CH 100V 8.3A 8-Pin SOIC N T/R Product overview: SI4056ADY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 8.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 8.3A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4056ADY-T1-GE3
MOSFET N-CH 100V 5.9A/8.3A 8SOIC
MOSFET N-CH 100V 5.9A/8.3A 8SOIC
MOSFET, N-CH, 100V, 8.3A, SOIC ROHS COMPLIANT: YES
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 742-SI4056ADY-T1-GE3CT-ND | 1038537-SI4056ADY-T1-GE3 | 278-SI4056ADY-T1-GE3 | SI4056ADY-T1-GE3 | SI4056ADY-T1-GE3 | 04AJ4587 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 100V 8.3A SOIC MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 8.3A, Soic Rohs Compliant Vishay |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3 | Tape and Reel | 8-SOIC (0.154", 3.90mm Width) | Surface Mount | TO-3 |
| PD | 2500 to 5000 milliwatts | 2500 milliwatts | 2500 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||
| MOSFET Operating Mode | Enhancement |
