MOSFET 2P-CH 30V 1.8A 6-TSOP
Manufacturer: Vishay
Win Source Part Number: 127411-SI3993DV-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 830mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.8A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 5nC @ 4.5V
Maximum Rds On at Id,Vgs: 133 mOhm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Mosfet Array 2 P-Channel (Dual) 30V 1.8A 830mW Surface Mount 6-TSOP
MOSFET 2P-CH 30V 1.8A 6TSOP Product overview: SI3993DV-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 1.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI3993DV-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET DUAL P-CH 30V (D-S)
MOSFET 2P-CH 30V 1.8A 6TSOP
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI3993DV-T1-E3 | 127411-SI3993DV-T1-E3 | SI3993DV-T1-E3TR-ND | 289-SI3993DV-T1-E3 | 880-SI3993DV-T1-E3 | SI3993DV-T1-E3 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3993DV-T1-E3 | FET, MOSFET Arrays | 30V 1.8A MOSFET Transistor | MOSFET DUAL P-CH 30V (D-S) | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; 2 P-Channel (Dual) | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||
| IDSS | 1800 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
