Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3993DV-T1-E3 SI3993DV-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 127411-SI3993DV-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.8A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 5nC @ 4.5V Maximum Rds On at Id,Vgs: 133 mOhm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 127411-SI3993DV-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.8A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 5nC @ 4.5V Maximum Rds On at Id,Vgs: 133 mOhm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3993DV-T1-E3 - 127411-SI3993DV-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3993DV-T1-E3
127411-SI3993DV-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3993DV-T1-E3 127411-SI3993DV-T1-E3
Manufacturer: Vishay Win Source Part Number: 127411-SI3993DV-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.8A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 5nC @ 4.5V Maximum Rds On at Id,Vgs: 133 mOhm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 127411-SI3993DV-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 830mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.8A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 5nC @ 4.5V
Maximum Rds On at Id,Vgs: 133 mOhm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - SI3993DV-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI3993DV-T1-E3
FET, MOSFET Arrays SI3993DV-T1-E3
MOSFET 2P-CH 30V 1.8A 6-TSOP

MOSFET 2P-CH 30V 1.8A 6-TSOP

Supplier's Site Datasheet
FET, MOSFET Arrays - SI3993DV-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI3993DV-T1-E3TR-ND
FET, MOSFET Arrays SI3993DV-T1-E3TR-ND
Mosfet Array 2 P-Channel (Dual) 30V 1.8A 830mW Surface Mount 6-TSOP

Mosfet Array 2 P-Channel (Dual) 30V 1.8A 830mW Surface Mount 6-TSOP

Buy Now Datasheet
Singapore
30V 1.8A MOSFET Transistor
289-SI3993DV-T1-E3
30V 1.8A MOSFET Transistor 289-SI3993DV-T1-E3
MOSFET 2P-CH 30V 1.8A 6TSOP Product overview: SI3993DV-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 1.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI3993DV-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET 2P-CH 30V 1.8A 6TSOP Product overview: SI3993DV-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 1.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI3993DV-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3993DV-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3993DV-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3993DV-T1-E3
MOSFET 2P-CH 30V 1.8A 6TSOP

MOSFET 2P-CH 30V 1.8A 6TSOP

Supplier's Site
MOSFET DUAL P-CH 30V (D-S) - 880-SI3993DV-T1-E3 - Utmel Electronic Limited
Hong Kong, China
MOSFET DUAL P-CH 30V (D-S)
880-SI3993DV-T1-E3
MOSFET DUAL P-CH 30V (D-S) 880-SI3993DV-T1-E3
MOSFET DUAL P-CH 30V (D-S)

MOSFET DUAL P-CH 30V (D-S)

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 127411-SI3993DV-T1-E3 SI3993DV-T1-E3 SI3993DV-T1-E3TR-ND 289-SI3993DV-T1-E3 SI3993DV-T1-E3 880-SI3993DV-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3993DV-T1-E3 FET, MOSFET Arrays FET, MOSFET Arrays 30V 1.8A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET DUAL P-CH 30V (D-S)
Polarity P-Channel P-Channel; 2 P-Channel (Dual)
V(BR)DSS 30 volts 30 volts 30 volts
PD 830 milliwatts 830 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 6-TSOP SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23; SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR)
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