Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3983DV-T1-E3 SI3983DV-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 1095877-SI3983DV-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.1A Gate-Source Threshold Voltage: 1.1V @ 250μA Max Gate Charge: 7.5nC @ 4.5V Maximum Rds On at Id,Vgs: 110 mOhm @ 2.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 1095877-SI3983DV-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.1A Gate-Source Threshold Voltage: 1.1V @ 250μA Max Gate Charge: 7.5nC @ 4.5V Maximum Rds On at Id,Vgs: 110 mOhm @ 2.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3983DV-T1-E3 - 1095877-SI3983DV-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3983DV-T1-E3
1095877-SI3983DV-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3983DV-T1-E3 1095877-SI3983DV-T1-E3
Manufacturer: Vishay Win Source Part Number: 1095877-SI3983DV-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.1A Gate-Source Threshold Voltage: 1.1V @ 250μA Max Gate Charge: 7.5nC @ 4.5V Maximum Rds On at Id,Vgs: 110 mOhm @ 2.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 1095877-SI3983DV-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 830mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.1A
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 7.5nC @ 4.5V
Maximum Rds On at Id,Vgs: 110 mOhm @ 2.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3983DV-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3983DV-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3983DV-T1-E3
MOSFET 2P-CH 20V 2.1A 6TSOP

MOSFET 2P-CH 20V 2.1A 6TSOP

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1095877-SI3983DV-T1-E3 SI3983DV-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3983DV-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel
V(BR)DSS 20 volts
PD 830 milliwatts
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