Vishay Intertechnology, Inc. MOSFET SI3973DV-T1-GE3

Dual P-channel 12 V MOSFET in a TSOP-6 package measuring 3 mm by 2.85 mm, designed for portable load and PA switching applications. It features a drain-source on-state resistance of 0.087 Ω at VGS = -4.5 V and -2.7 A, with a continuous drain current of -2.7 A at 25 °C and -2.1 A at 70 °C. The device complies with RoHS Directive 2002/95/EC and is halogen-free per IEC 61249-2-21. Maximum junction temperature is 150 °C, with a thermal resistance of 130 °C/W junction-to-ambient in steady state.