Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3948DV-T1-GE3 SI3948DV-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 130406-SI3948DV-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Maximum Power Dissipation: 1.15W Drain-Source Breakdown Voltage: 30V Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 3.2nC @ 5V Maximum Rds On at Id,Vgs: 105 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 130406-SI3948DV-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Maximum Power Dissipation: 1.15W Drain-Source Breakdown Voltage: 30V Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 3.2nC @ 5V Maximum Rds On at Id,Vgs: 105 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3948DV-T1-GE3 - 130406-SI3948DV-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3948DV-T1-GE3
130406-SI3948DV-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3948DV-T1-GE3 130406-SI3948DV-T1-GE3
Manufacturer: Vishay Win Source Part Number: 130406-SI3948DV-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Maximum Power Dissipation: 1.15W Drain-Source Breakdown Voltage: 30V Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 3.2nC @ 5V Maximum Rds On at Id,Vgs: 105 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 130406-SI3948DV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 1.15W
Drain-Source Breakdown Voltage: 30V
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 3.2nC @ 5V
Maximum Rds On at Id,Vgs: 105 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3948DV-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3948DV-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3948DV-T1-GE3
MOSFET 2N-CH 30V 6TSOP

MOSFET 2N-CH 30V 6TSOP

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 130406-SI3948DV-T1-GE3 SI3948DV-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3948DV-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
V(BR)DSS 30 volts
PD 1150 milliwatts
Unlock Full Specs
to access all available technical data