Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3948DV-T1-GE3 SI3948DV-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 130406-SI3948DV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 1.15W
Drain-Source Breakdown Voltage: 30V
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 3.2nC @ 5V
Maximum Rds On at Id,Vgs: 105 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited

DUAL N-CH MOSFET TSOP-6 30V 105MOHM @ 10V - Tape and Reel Product overview: SI3948DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V, 105MOHM, 10V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, 105MOHM, 10V, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3948DV-T1-GE3 can be used for catalog matching and distributor lookup.