Mosfet Array 2 N-Channel (Dual) 30V 3.7A 1.4W Surface Mount 6-TSOP
Mosfet Array 2 N-Channel (Dual) 30V 3.7A 1.4W Surface Mount 6-TSOP
Mosfet Array 2 N-Channel (Dual) 30V 3.7A 1.4W Surface Mount 6-TSOP
N-Channel JFET, 30V, 3.7A ID, 58mR Rds On, TSOP Product overview: SI3932DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 3.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3932DV-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 136813-SI3932DV-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 1.4W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.7A
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 6nC @ 10V
Max Input Capacitance: 235pF @ 15V
Maximum Rds On at Id,Vgs: 58 mOhm @ 3.4A, 10V
Alternative Parts (Cross-Reference): DMN3135LVT-7; Si3932DV; Si3932DV-T1-GE3; AP2626GY-HF-3TR;
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
MOSFET 2N-CH 30V 3.7A 6-TSOP
MOSFET 2N-CH 30V 3.7A 6TSOP
MOSFET, DUAL N-CH, 30V, 3.7A, TSOP; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power RoHS Compliant: Yes
MOSFET, N-CH, 30V, 3.7A, 150DEG C, 1.4W; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.7A; On Resistance Rds(on):0.047ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET, DUAL N CHANNEL, 30V, 3.7A, TSOP-6, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.7A; On Resistance Rds(on):0.047ohm; Transistor Mounting:Surface Mount; No. of Pins:6PinsRoHS Compliant: Yes
MOSFET 30V Vds 20V Vgs TSOP-6
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI3932DV-T1-GE3TR-ND | 278-SI3932DV-T1-GE3 | 136813-SI3932DV-T1-GE3 | SI3932DV-T1-GE3 | SI3932DV-T1-GE3 | 05AC9493 | 86R3877 | SI3932DV-T1-GE3 |
| Product Name | FET, MOSFET Arrays | N-Channel 30V 3.7A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3932DV-T1-GE3 | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N-Ch, 30V, 3.7A, Tsop; Transistor Polarity Vishay | Mosfet, Dual N Channel, 30V, 3.7A, Tsop-6, Full Reel; Transistor Polarity Vishay | MOSFET |
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; 6-TSOP | SOT23; SOT-23-6 Thin, TSOT-23-6 | TO-3 | TO-3 | |||
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| PD | 1400 milliwatts | 1400 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| V(BR)DSS | 30 volts | 30 volts |
