The Si3911DV is a dual P-channel 20-V MOSFET in a TSOP-6 package measuring 3 mm by 2.85 mm, designed for power switching and load control applications. It has a continuous drain current of -1.8 A at 70 °C and -2.2 A at 25 °C, with a drain-source on-state resistance of 0.200 Ω at -2.5 V gate-source voltage and 0.300 Ω at -1.8 V gate-source voltage. The device is RoHS compliant and halogen-free per IEC 61249-2-21, with an operating junction temperature range of -55 °C to 150 °C and a maximum junction-to-ambient thermal resistance of 150 °C/W. It is qualified under the TrenchFET® technology and meets AEC-Q200 automotive reliability standards.
MOSFET 2P-CH 20V 1.8A 6TSOP Product overview: SI3911DV-T3-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI3911DV-T3-E3 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-SI3911DV-T3-E3 |
| Product Name | 20V 1.8A MOSFET Transistor |
| TJ | -55 to 150 C (-67 to 302 F) |
