Vishay Intertechnology, Inc. 20V 2.2A 1.15W MOSFET Transistor SI3911DV-T1-GE3

MOSFET 20V 2.2A 1.15W 145mohm @ 4.5V Product overview: SI3911DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.2A, 1.15W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.2A, 1.15W, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI3911DV-T1-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 969424-SI3911DV-T1-GE3
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 20 V
Power Dissipation: 830 mW
Number of Pins: 6
Rise Time: 29 ns
Fall Time: 30 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TSOP
Popularity: Low
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Element Configuration: Dual
Max Power Dissipation: 830 mW
Turn-On Delay Time: 12 ns
Continuous Drain Current (ID): 1.8 A
Drain to Source Breakdown Voltage: 20 V
Turn-Off Delay Time: 24 ns
Drain to Source Resistance: 145 mΩ
Gate to Source Voltage (Vgs): 8 V
Rds On Max: 145 mΩ