Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3909DV-T1 SI3909DV-T1

Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 958578-SI3909DV-T1 Mounting: SMD (SMT) Power Dissipation: 1.15 W Rise Time: 34 ns Fall Time: 34 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TSOP Popularity: Low Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Non-Compliant Min Operating Temperature: -55 °C Element Configuration: Dual Continuous Drain Current (ID): 1.8 A Drain to Source Breakdown Voltage: 20 V Turn-Off Delay Time: 19 ns Drain to Source Resistance: 200 mΩ Gate to Source Voltage (Vgs): 12 V