MOSFET 2N-CH 20V 2A 6-TSOP
Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP
Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP
Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP
Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6 Product overview: SI3900DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 2A, 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 2A, 20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3900DV-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028443-SI3900DV-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 830mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 4nC @ 4.5V
Maximum Rds On at Id,Vgs: 125 mOhm @ 2.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
MOSFET 20V Vds 12V Vgs TSOP-6
DUAL N CHANNEL MOSFET, 20V, 2.4A, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.4A; On Resistance Rds(on):0.125ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
DUAL N CHANNEL MOSFET, 20V, 2.4A; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.4A; On Resistance Rds(on):0.125ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
MOSFET 2N-CH 20V 2A 6TSOP
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI3900DV-T1-GE3 | SI3900DV-T1-GE3CT-ND | 278-SI3900DV-T1-GE3 | 028443-SI3900DV-T1-GE3 | SI3900DV-T1-GE3 | 35R0064 | SI3900DV-T1-GE3 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | N-Channel 2A 20V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3900DV-T1-GE3 | MOSFET | Dual N Channel Mosfet, 20V, 2.4A, Full Reel; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| IDSS | 2000 milliamps | 2400 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
