MOSFET 2N-CH 20V 2A 6-TSOP
Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP
Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP
Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP
N-Channel JFET, 20V, 2A ID, 125mR Rds On, TSOP Product overview: SI3900DV-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3900DV-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028442-SI3900DV-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 830mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 4nC @ 4.5V
Maximum Rds On at Id,Vgs: 125 mOhm @ 2.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
DUAL N CHANNEL, MOSFET, 20V, 2.4A, TSOP-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2A; On Resistance Rds(on):0.125ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
MOSFET 2N-CH 20V 2A 6TSOP
MOSFET TSOP6 20V DUAL N-CH (D-S) TREN
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI3900DV-T1-E3 | SI3900DV-T1-E3CT-ND | 278-SI3900DV-T1-E3 | 028442-SI3900DV-T1-E3 | 65K2704 | SI3900DV-T1-E3 | SI3900DV-T1-E3 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | N-Channel 20V 2A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3900DV-T1-E3 | Dual N Channel, Mosfet, 20V, 2.4A, Tsop-6; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| IDSS | 2000 milliamps | 2000 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
