Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3900DV-T1-E3 SI3900DV-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 028442-SI3900DV-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 4nC @ 4.5V Maximum Rds On at Id,Vgs: 125 mOhm @ 2.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 028442-SI3900DV-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 4nC @ 4.5V Maximum Rds On at Id,Vgs: 125 mOhm @ 2.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3900DV-T1-E3 - 028442-SI3900DV-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3900DV-T1-E3
028442-SI3900DV-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3900DV-T1-E3 028442-SI3900DV-T1-E3
Manufacturer: Vishay Win Source Part Number: 028442-SI3900DV-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 4nC @ 4.5V Maximum Rds On at Id,Vgs: 125 mOhm @ 2.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028442-SI3900DV-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 830mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 4nC @ 4.5V
Maximum Rds On at Id,Vgs: 125 mOhm @ 2.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - SI3900DV-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI3900DV-T1-E3CT-ND
FET, MOSFET Arrays SI3900DV-T1-E3CT-ND
Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP

Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP

Buy Now Datasheet
FET, MOSFET Arrays - SI3900DV-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI3900DV-T1-E3TR-ND
FET, MOSFET Arrays SI3900DV-T1-E3TR-ND
Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP

Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP

Buy Now Datasheet
FET, MOSFET Arrays - SI3900DV-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI3900DV-T1-E3DKR-ND
FET, MOSFET Arrays SI3900DV-T1-E3DKR-ND
Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP

Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP

Buy Now Datasheet
FET, MOSFET Arrays - SI3900DV-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI3900DV-T1-E3
FET, MOSFET Arrays SI3900DV-T1-E3
MOSFET 2N-CH 20V 2A 6-TSOP

MOSFET 2N-CH 20V 2A 6-TSOP

Supplier's Site Datasheet
Dual N Channel, Mosfet, 20V, 2.4A, Tsop-6; Transistor Polarity Vishay - 65K2704 - Newark, An Avnet Company
Chicago, IL, United States
Dual N Channel, Mosfet, 20V, 2.4A, Tsop-6; Transistor Polarity Vishay
65K2704
Dual N Channel, Mosfet, 20V, 2.4A, Tsop-6; Transistor Polarity Vishay 65K2704
DUAL N CHANNEL, MOSFET, 20V, 2.4A, TSOP-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2A; On Resistance Rds(on):0.125ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

DUAL N CHANNEL, MOSFET, 20V, 2.4A, TSOP-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2A; On Resistance Rds(on):0.125ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET TSOP6 20V DUAL N-CH (D-S) TREN

MOSFET TSOP6 20V DUAL N-CH (D-S) TREN

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3900DV-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3900DV-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3900DV-T1-E3
MOSFET 2N-CH 20V 2A 6TSOP

MOSFET 2N-CH 20V 2A 6TSOP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 028442-SI3900DV-T1-E3 SI3900DV-T1-E3CT-ND SI3900DV-T1-E3 65K2704 SI3900DV-T1-E3 SI3900DV-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3900DV-T1-E3 FET, MOSFET Arrays FET, MOSFET Arrays Dual N Channel, Mosfet, 20V, 2.4A, Tsop-6; Transistor Polarity Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; 2 N-Channel (Dual) N-Channel
V(BR)DSS 20 volts 20 volts
PD 830 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 6-TSOP SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23; SOT-23-6 Thin, TSOT-23-6 TO-3
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