Vishay Precision Group FET, MOSFET Arrays SI3900DV-T1-E3

Description
Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP
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Description
Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
FET, MOSFET Arrays - SI3900DV-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI3900DV-T1-E3CT-ND
FET, MOSFET Arrays SI3900DV-T1-E3CT-ND
Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP

Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP

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FET, MOSFET Arrays - SI3900DV-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI3900DV-T1-E3TR-ND
FET, MOSFET Arrays SI3900DV-T1-E3TR-ND
Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP

Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP

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FET, MOSFET Arrays - SI3900DV-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI3900DV-T1-E3DKR-ND
FET, MOSFET Arrays SI3900DV-T1-E3DKR-ND
Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP

Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3900DV-T1-E3 - 028442-SI3900DV-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3900DV-T1-E3
028442-SI3900DV-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3900DV-T1-E3 028442-SI3900DV-T1-E3
Manufacturer: Vishay Win Source Part Number: 028442-SI3900DV-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 4nC @ 4.5V Maximum Rds On at Id,Vgs: 125 mOhm @ 2.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028442-SI3900DV-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 830mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 4nC @ 4.5V
Maximum Rds On at Id,Vgs: 125 mOhm @ 2.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

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FET, MOSFET Arrays - SI3900DV-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI3900DV-T1-E3
FET, MOSFET Arrays SI3900DV-T1-E3
MOSFET 2N-CH 20V 2A 6-TSOP

MOSFET 2N-CH 20V 2A 6-TSOP

Supplier's Site Datasheet
Dual N Channel, Mosfet, 20V, 2.4A, Tsop-6; Transistor Polarity Vishay - 65K2704 - Newark, An Avnet Company
Chicago, IL, United States
Dual N Channel, Mosfet, 20V, 2.4A, Tsop-6; Transistor Polarity Vishay
65K2704
Dual N Channel, Mosfet, 20V, 2.4A, Tsop-6; Transistor Polarity Vishay 65K2704
DUAL N CHANNEL, MOSFET, 20V, 2.4A, TSOP-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2A; On Resistance Rds(on):0.125ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

DUAL N CHANNEL, MOSFET, 20V, 2.4A, TSOP-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2A; On Resistance Rds(on):0.125ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3900DV-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3900DV-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3900DV-T1-E3
MOSFET 2N-CH 20V 2A 6TSOP

MOSFET 2N-CH 20V 2A 6TSOP

Supplier's Site
Sheung Wan, Hong Kong
MOSFET TSOP6 20V DUAL N-CH (D-S) TREN

MOSFET TSOP6 20V DUAL N-CH (D-S) TREN

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Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI3900DV-T1-E3CT-ND 028442-SI3900DV-T1-E3 SI3900DV-T1-E3 65K2704 SI3900DV-T1-E3 SI3900DV-T1-E3
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3900DV-T1-E3 FET, MOSFET Arrays Dual N Channel, Mosfet, 20V, 2.4A, Tsop-6; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Package Type SOT23; SOT-23-6 Thin, TSOT-23-6 SOT3; 6-TSOP SOT23; SOT-23-6 Thin, TSOT-23-6 TO-3
Polarity N-Channel N-Channel; 2 N-Channel (Dual) N-Channel
V(BR)DSS 20 volts 20 volts
PD 830 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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