Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3853DV-T1-GE3 SI3853DV-T1-GE3

Manufacturer: Vishay Win Source Part Number: 1095867-SI3853DV-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 830mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.6A (Ta) Gate-Source Threshold Voltage: 500mV @ 250μA (Min) Max Gate Charge: 4nC @ 4.5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 200 mOhm @ 1.8A, 4.5V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance