Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3851DV-T1-GE3 SI3851DV-T1-GE3

Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092829-SI3851DV-T1- GE3 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): -30 V Power Dissipation: 830 mW Categories: Transistors - FETs, MOSFETs - RF Case / Package: TSOP Popularity: Low Fake Threat In the Open Market: 73 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C Max Power Dissipation: 830 mW Continuous Drain Current (ID): 1.6 A Drain to Source Breakdown Voltage: 30 V Drain to Source Resistance: 200 mΩ Gate to Source Voltage (Vgs): 20 V