Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3812DV-T1 SI3812DV-T1

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1028557-SI3812DV-T1
Mounting: SMD (SMT)
Power Dissipation: 830 mW
Number of Pins: 6
Rise Time: 30 ns
Fall Time: 30 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TSOP
Popularity: Low
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
RoHS: Non-Compliant
Min Operating Temperature: -55 °C
Voltage Rating (DC): 20 V
Element Configuration: Single
Continuous Drain Current (ID): 2.4 A
Drain to Source Breakdown Voltage: 20 V
Turn-Off Delay Time: 14 ns
Drain to Source Resistance: 125 mΩ
Gate to Source Voltage (Vgs): 12 V

MOSFET 20V 2.4A 1.15 Product overview: SI3812DV-T1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.4A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI3812DV-T1 can be used for catalog matching and distributor lookup.