Vishay Precision Group FET, MOSFET Arrays SI3590DV-T1-GE3

Description
Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP
Request a Quote Datasheet
Description
Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SI3590DV-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI3590DV-T1-GE3CT-ND
FET, MOSFET Arrays SI3590DV-T1-GE3CT-ND
Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP

Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP

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FET, MOSFET Arrays - SI3590DV-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI3590DV-T1-GE3DKR-ND
FET, MOSFET Arrays SI3590DV-T1-GE3DKR-ND
Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP

Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP

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FET, MOSFET Arrays - SI3590DV-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI3590DV-T1-GE3TR-ND
FET, MOSFET Arrays SI3590DV-T1-GE3TR-ND
Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP

Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3590DV-T1-GE3 - 211631-SI3590DV-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3590DV-T1-GE3
211631-SI3590DV-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3590DV-T1-GE3 211631-SI3590DV-T1-GE3
Manufacturer: Vishay Win Source Part Number: 211631-SI3590DV-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Family Name: Si3590DV Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.5A, 1.7A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 4.5nC @ 4.5V Maximum Rds On at Id,Vgs: 77 mOhm @ 3A, 4.5V Alternative Parts (Cross-Reference): NTGD4167CT1G; CPH6614-TL-H; CPH6614-TL-E; CPH6614; Introduction Date: November 01, 2002 ECCN: EAR99 Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 211631-SI3590DV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: Si3590DV
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 830mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.5A, 1.7A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 4.5nC @ 4.5V
Maximum Rds On at Id,Vgs: 77 mOhm @ 3A, 4.5V
Alternative Parts (Cross-Reference): NTGD4167CT1G; CPH6614-TL-H; CPH6614-TL-E; CPH6614;
Introduction Date: November 01, 2002
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
SMD 30V 2.5A MOSFET Transistor
278-SI3590DV-T1-GE3
SMD 30V 2.5A MOSFET Transistor 278-SI3590DV-T1-GE3
2-Ch N/P-Ch JFET, 30V, 2.5A, TSOP, Surface Mount Product overview: SI3590DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 2.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 2.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3590DV-T1-GE3 can be used for catalog matching and distributor lookup.

2-Ch N/P-Ch JFET, 30V, 2.5A, TSOP, Surface Mount Product overview: SI3590DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 2.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 2.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3590DV-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet Transistor, N And P Channel, 2.5 A, 30 V, 0.062 Ohm, 4.5 V, 1.5 V Rohs Compliant Vishay - 64T4059 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N And P Channel, 2.5 A, 30 V, 0.062 Ohm, 4.5 V, 1.5 V Rohs Compliant Vishay
64T4059
Mosfet Transistor, N And P Channel, 2.5 A, 30 V, 0.062 Ohm, 4.5 V, 1.5 V Rohs Compliant Vishay 64T4059
MOSFET Transistor, N and P Channel, 2.5 A, 30 V, 0.062 ohm, 4.5 V, 1.5 V RoHS Compliant: Yes

MOSFET Transistor, N and P Channel, 2.5 A, 30 V, 0.062 ohm, 4.5 V, 1.5 V RoHS Compliant: Yes

Supplier's Site Datasheet
Dual N/p Ch Mosfet, 30V, 2A, Tsop; Transistor Polarity Vishay - 35R0053 - Newark, An Avnet Company
Chicago, IL, United States
Dual N/p Ch Mosfet, 30V, 2A, Tsop; Transistor Polarity Vishay
35R0053
Dual N/p Ch Mosfet, 30V, 2A, Tsop; Transistor Polarity Vishay 35R0053
DUAL N/P CH MOSFET, 30V, 2A, TSOP; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2A; On Resistance Rds(on):0.062ohm; Transistor Mounting:Surface Mount; No. of Pins:6Pins RoHS Compliant: Yes

DUAL N/P CH MOSFET, 30V, 2A, TSOP; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2A; On Resistance Rds(on):0.062ohm; Transistor Mounting:Surface Mount; No. of Pins:6Pins RoHS Compliant: Yes

Supplier's Site
Dual N/p Channel Mosfet, 30V, 2A, Tsop; Transistor Polarity Vishay - 35R6220 - Newark, An Avnet Company
Chicago, IL, United States
Dual N/p Channel Mosfet, 30V, 2A, Tsop; Transistor Polarity Vishay
35R6220
Dual N/p Channel Mosfet, 30V, 2A, Tsop; Transistor Polarity Vishay 35R6220
DUAL N/P CHANNEL MOSFET, 30V, 2A, TSOP; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.5A; On Resistance Rds(on):0.062ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

DUAL N/P CHANNEL MOSFET, 30V, 2A, TSOP; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.5A; On Resistance Rds(on):0.062ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

Supplier's Site
FET, MOSFET Arrays - SI3590DV-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI3590DV-T1-GE3
FET, MOSFET Arrays SI3590DV-T1-GE3
MOSFET N/P-CH 30V 2.5A 6-TSOP

MOSFET N/P-CH 30V 2.5A 6-TSOP

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR

MOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3590DV-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3590DV-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3590DV-T1-GE3
MOSFET N/P-CH 30V 2.5A 6TSOP

MOSFET N/P-CH 30V 2.5A 6TSOP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI3590DV-T1-GE3CT-ND 211631-SI3590DV-T1-GE3 278-SI3590DV-T1-GE3 64T4059 35R0053 35R6220 SI3590DV-T1-GE3 SI3590DV-T1-GE3 SI3590DV-T1-GE3
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3590DV-T1-GE3 SMD 30V 2.5A MOSFET Transistor Mosfet Transistor, N And P Channel, 2.5 A, 30 V, 0.062 Ohm, 4.5 V, 1.5 V Rohs Compliant Vishay Dual N/p Ch Mosfet, 30V, 2A, Tsop; Transistor Polarity Vishay Dual N/p Channel Mosfet, 30V, 2A, Tsop; Transistor Polarity Vishay FET, MOSFET Arrays MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SOT23; SOT-23-6 Thin, TSOT-23-6 SOT3; 6-TSOP TO-3 TO-3 TO-3 SOT23; SOT-23-6 Thin, TSOT-23-6
Polarity P-Channel N-Channel; P-Channel P-Channel P-Channel P-Channel; N and P-Channel
V(BR)DSS 30 volts 30 volts
PD 830 milliwatts 830 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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