Vishay Precision Group FET, MOSFET Arrays SI3590DV-T1-E3

Description
Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP
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Description
Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP
Request a Quote Datasheet

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Product
Description
Supplier Links
FET, MOSFET Arrays - SI3590DV-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI3590DV-T1-E3DKR-ND
FET, MOSFET Arrays SI3590DV-T1-E3DKR-ND
Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP

Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP

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FET, MOSFET Arrays - SI3590DV-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI3590DV-T1-E3TR-ND
FET, MOSFET Arrays SI3590DV-T1-E3TR-ND
Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP

Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP

Buy Now Datasheet
FET, MOSFET Arrays - SI3590DV-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI3590DV-T1-E3CT-ND
FET, MOSFET Arrays SI3590DV-T1-E3CT-ND
Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP

Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3590DV-T1-E3 - 028441-SI3590DV-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3590DV-T1-E3
028441-SI3590DV-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3590DV-T1-E3 028441-SI3590DV-T1-E3
Manufacturer: Vishay Win Source Part Number: 028441-SI3590DV-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Family Name: Si3590DV Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Maximum Power Dissipation: 830mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.5A, 1.7A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 4.5nC @ 4.5V Maximum Rds On at Id,Vgs: 77 mOhm @ 3A, 4.5V Alternative Parts (Cross-Reference): NTGD4167CT1G; CPH6614-TL-E; CPH6614; CPH6614-TL-H; Introduction Date: November 01, 2002 ECCN: EAR99 Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 028441-SI3590DV-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: Si3590DV
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 830mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.5A, 1.7A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 4.5nC @ 4.5V
Maximum Rds On at Id,Vgs: 77 mOhm @ 3A, 4.5V
Alternative Parts (Cross-Reference): NTGD4167CT1G; CPH6614-TL-E; CPH6614; CPH6614-TL-H;
Introduction Date: November 01, 2002
ECCN: EAR99
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
FET, MOSFET Arrays - SI3590DV-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI3590DV-T1-E3
FET, MOSFET Arrays SI3590DV-T1-E3
MOSFET N/P-CH 30V 2.5A 6TSOP

MOSFET N/P-CH 30V 2.5A 6TSOP

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR

MOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR

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Npn & Pnp Mosfet, 30V, 2A, Tsop; Transistor Polarity Vishay - 65K2703 - Newark, An Avnet Company
Chicago, IL, United States
Npn & Pnp Mosfet, 30V, 2A, Tsop; Transistor Polarity Vishay
65K2703
Npn & Pnp Mosfet, 30V, 2A, Tsop; Transistor Polarity Vishay 65K2703
NPN & PNP MOSFET, 30V, 2A, TSOP; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.5A; On Resistance Rds(on):0.062ohm; Transistor Mounting:Surface Mount; No. of Pins:6Pins RoHS Compliant: Yes

NPN & PNP MOSFET, 30V, 2A, TSOP; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.5A; On Resistance Rds(on):0.062ohm; Transistor Mounting:Surface Mount; No. of Pins:6Pins RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N & P Channel, 30V, 0.062Ohm, 2.5A, Tsop-6, Full Reel; Transistor Polarity Vishay - 06J7626 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N & P Channel, 30V, 0.062Ohm, 2.5A, Tsop-6, Full Reel; Transistor Polarity Vishay
06J7626
Mosfet, N & P Channel, 30V, 0.062Ohm, 2.5A, Tsop-6, Full Reel; Transistor Polarity Vishay 06J7626
MOSFET, N & P CHANNEL, 30V, 0.062OHM, 2.5A, TSOP-6, FULL REEL; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.5A; On Resistance Rds(on):0.062ohm; No. of Pins:6Pins RoHS Compliant: Yes

MOSFET, N & P CHANNEL, 30V, 0.062OHM, 2.5A, TSOP-6, FULL REEL; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.5A; On Resistance Rds(on):0.062ohm; No. of Pins:6Pins RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3590DV-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3590DV-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3590DV-T1-E3
MOSFET N/P-CH 30V 2.5A 6TSOP

MOSFET N/P-CH 30V 2.5A 6TSOP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI3590DV-T1-E3DKR-ND 028441-SI3590DV-T1-E3 SI3590DV-T1-E3 SI3590DV-T1-E3 65K2703 06J7626 SI3590DV-T1-E3
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3590DV-T1-E3 FET, MOSFET Arrays MOSFET Npn & Pnp Mosfet, 30V, 2A, Tsop; Transistor Polarity Vishay Mosfet, N & P Channel, 30V, 0.062Ohm, 2.5A, Tsop-6, Full Reel; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SOT23; SOT-23-6 Thin, TSOT-23-6 SOT3; 6-TSOP SOT23; SOT-23-6 Thin, TSOT-23-6 TO-3 TO-3
Polarity P-Channel P-Channel; N and P-Channel P-Channel
V(BR)DSS 30 volts 30 volts
PD 830 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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