Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP
Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP
Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW Surface Mount 6-TSOP
Manufacturer: Vishay
Win Source Part Number: 028441-SI3590DV-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: Si3590DV
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 830mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.5A, 1.7A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 4.5nC @ 4.5V
Maximum Rds On at Id,Vgs: 77 mOhm @ 3A, 4.5V
Alternative Parts (Cross-Reference): NTGD4167CT1G; CPH6614-TL-E; CPH6614; CPH6614-TL-H;
Introduction Date: November 01, 2002
ECCN: EAR99
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
N/P-CH MOSFET 30V 2.5A 170mR TSOP SMT Product overview: SI3590DV-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3590DV-T1-E3 can be used for catalog matching and distributor lookup.
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MOSFET N/P-CH 30V 2.5A 6TSOP
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI3590DV-T1-E3DKR-ND | 028441-SI3590DV-T1-E3 | 278-SI3590DV-T1-E3 | SI3590DV-T1-E3 | SI3590DV-T1-E3 | 65K2703 | 06J7626 | SI3590DV-T1-E3 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3590DV-T1-E3 | 30V 2.5A MOSFET Transistor | FET, MOSFET Arrays | MOSFET | Npn & Pnp Mosfet, 30V, 2A, Tsop; Transistor Polarity Vishay | Mosfet, N & P Channel, 30V, 0.062Ohm, 2.5A, Tsop-6, Full Reel; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; 6-TSOP | SOT23; SOT-23-6 Thin, TSOT-23-6 | TO-3 | TO-3 | |||
| Polarity | P-Channel | N-Channel; P-Channel | P-Channel; N and P-Channel | P-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | ||||||
| PD | 830 milliwatts | 830 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
