Manufacturer: Vishay
Win Source Part Number: 1095861-SI3588DV-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 830mW, 83mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.5A, 570mA
Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
Max Gate Charge: 7.5nC @ 4.5V
Maximum Rds On at Id,Vgs: 80 mOhm @ 3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient
MOSFET N/P-CH 20V 2.5A 6-TSOP
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1095861-SI3588DV-T1-GE3 | SI3588DV-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3588DV-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | |
| V(BR)DSS | 20 volts | |
| PD | 830 to 83 milliwatts |
