Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3588DV-T1-E3 SI3588DV-T1-E3

Manufacturer: Vishay
Win Source Part Number: 123065-SI3588DV-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 830mW, 83mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.5A, 570mA
Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
Max Gate Charge: 7.5nC @ 4.5V
Maximum Rds On at Id,Vgs: 80 mOhm @ 3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management

MOSFET N/P-CH 20V 2.5A 6TSOP Product overview: SI3588DV-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI3588DV-T1-E3 can be used for catalog matching and distributor lookup.