MOSFET N/P-CH 20V 2.9A 6-TSOP
Manufacturer: Vishay
Win Source Part Number: 100848-SI3586DV-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 830mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.9A, 2.1A
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 6nC @ 4.5V
Maximum Rds On at Id,Vgs: 60 mOhm @ 3.4A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient
MOSFET N/P-CH 20V 2.9A 6TSOP
| ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI3586DV-T1-GE3 | 100848-SI3586DV-T1-GE3 | SI3586DV-T1-GE3 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3586DV-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; N and P-Channel | P-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||
| V(BR)DSS | 20 volts | 20 volts | |
| IDSS | 2900 milliamps |
