Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3586DV-T1-GE3 SI3586DV-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 100848-SI3586DV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 830mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.9A, 2.1A
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 6nC @ 4.5V
Maximum Rds On at Id,Vgs: 60 mOhm @ 3.4A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient

MOSFET N/P-CH 20V 2.9A 6TSOP Product overview: SI3586DV-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.9A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI3586DV-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET N/P-CH 20V 2.9A 6-TSOP