N/P-Ch MOSFET TSOP-6 20V 58/195mohm @ 4.
N/P-Ch MOSFET TSOP-6 20V 58/195mohm @ 4.
N/P-Ch MOSFET TSOP-6 20V 58/195mohm @ 4.
Mosfet Array N and P-Channel 20V 3.9A, 2.1A 1.4W, 1.3W Surface Mount 6-TSOP
Mosfet Array N and P-Channel 20V 3.9A, 2.1A 1.4W, 1.3W Surface Mount 6-TSOP
Mosfet Array N and P-Channel 20V 3.9A, 2.1A 1.4W, 1.3W Surface Mount 6-TSOP
Manufacturer: Vishay
Win Source Part Number: 1095860-SI3585CDV-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: Si3585CDV
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 1.4W, 1.3W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.9A, 2.1A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 4.8nC @ 10V
Max Input Capacitance: 150pF @ 10V
Maximum Rds On at Id,Vgs: 58 mOhm @ 2.5A, 4.5V
Alternative Parts (Cross-Reference): BSL215C H6327; BSL215CL6327; FDC6327C-Q; FDC6327C-NF40;
Introduction Date: April 11, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
MOSFET N/P-CH 20V 3.9A 6TSOP
MOSFET, N & P-CH, 20V, 3.9A, 150DEG C; Transistor Polarity:Complementa
MOSFET, N/P-CH, 20V, 3.9A, TSOP-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power RoHS Compliant: Yes
MOSFET, COMPLEMENTARY, 20V, 3.9A, TSOP ROHS COMPLIANT: YES
MOSFET N/P-CH 20V 3.9A 6TSOP
| RS Components, Ltd. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1807911P | SI3585CDV-T1-GE3CT-ND | 1095860-SI3585CDV-T1-GE3 | SI3585CDV-T1-GE3 | 70AC6501 | 96AJ0114 | SI3585CDV-T1-GE3 |
| Product Name | MOSFETs | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3585CDV-T1-GE3 | FET, MOSFET Arrays | Mosfet, N & P-Ch, 20V, 3.9A, 150Deg C; Transistor Polarity Vishay | Mosfet, Complementary, 20V, 3.9A, Tsop Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | TSOP | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; 6-TSOP | SOT23; SOT-23-6 Thin, TSOT-23-6 | TO-3 | TO-3 | |
| Polarity | P-Channel | P-Channel; N and P-Channel | |||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| PD | 1400 to 1300 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
