Trans MOSFET N/P-CH 20V 3.9A/2.1A 6-Pin TSOP T/R Product overview: SI3585CDV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3.9A, 2.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.9A, 2.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3585CDV-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 1095860-SI3585CDV-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: Si3585CDV
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 1.4W, 1.3W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.9A, 2.1A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 4.8nC @ 10V
Max Input Capacitance: 150pF @ 10V
Maximum Rds On at Id,Vgs: 58 mOhm @ 2.5A, 4.5V
Alternative Parts (Cross-Reference): BSL215C H6327; BSL215CL6327; FDC6327C-Q; FDC6327C-NF40;
Introduction Date: April 11, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Mosfet Array N and P-Channel 20V 3.9A, 2.1A 1.4W, 1.3W Surface Mount 6-TSOP
Mosfet Array N and P-Channel 20V 3.9A, 2.1A 1.4W, 1.3W Surface Mount 6-TSOP
Mosfet Array N and P-Channel 20V 3.9A, 2.1A 1.4W, 1.3W Surface Mount 6-TSOP
N/P-Ch MOSFET TSOP-6 20V 58/195mohm @ 4.
N/P-Ch MOSFET TSOP-6 20V 58/195mohm @ 4.
N/P-Ch MOSFET TSOP-6 20V 58/195mohm @ 4.
MOSFET N/P-CH 20V 3.9A 6TSOP
MOSFET, N & P-CH, 20V, 3.9A, 150DEG C; Transistor Polarity:Complementa
MOSFET, N/P-CH, 20V, 3.9A, TSOP-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power RoHS Compliant: Yes
MOSFET, COMPLEMENTARY, 20V, 3.9A, TSOP ROHS COMPLIANT: YES
MOSFET N/P-CH 20V 3.9A 6TSOP
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | RS Components, Ltd. | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI3585CDV-T1-GE3 | 1095860-SI3585CDV-T1-GE3 | SI3585CDV-T1-GE3CT-ND | 1807911P | SI3585CDV-T1-GE3 | 70AC6501 | 96AJ0114 | SI3585CDV-T1-GE3 |
| Product Name | 20V 3.9A 2.1A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3585CDV-T1-GE3 | FET, MOSFET Arrays | MOSFETs | FET, MOSFET Arrays | Mosfet, N & P-Ch, 20V, 3.9A, 150Deg C; Transistor Polarity Vishay | Mosfet, Complementary, 20V, 3.9A, Tsop Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; P-Channel | P-Channel | P-Channel; N and P-Channel | |||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||||
| Transconductance | 1.00E-3 to 0.0120 kS | |||||||
| PD | 1.3 milliwatts | 1400 to 1300 milliwatts |
