MOSFET N/P-CH 30V 6-TSOP
Manufacturer: Vishay
Win Source Part Number: 136483-SI3552DV-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: SI3552DV
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 1.15W
Drain-Source Breakdown Voltage: 30V
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 3.2nC @ 5V
Maximum Rds On at Id,Vgs: 105 mOhm @ 2.5A, 10V
Alternative Parts (Cross-Reference): BSL316CL6327HTSA1; BSL316CH6327XTSA1; BSL316CL6327XT; BSL316C H6327;
Introduction Date: April 18, 2000
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Mosfet Array N and P-Channel 30V 2.5A 1.15W Surface Mount 6-TSOP
Mosfet Array N and P-Channel 30V 2.5A 1.15W Surface Mount 6-TSOP
Mosfet Array N and P-Channel 30V 2.5A 1.15W Surface Mount 6-TSOP
DUAL N/P CHANNEL MOSFET, 30V, TSOP; Transistor Polarity:Complementa
DUAL N/P CHANNEL MOSFET, 30V, TSOP; Transistor Polarity:Complementa
MOSFET -30V Vds 20V Vgs TSOP-6 N&P PAIR
MOSFET N/P-CH 30V 2.5A 6TSOP
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI3552DV-T1-GE3 | 136483-SI3552DV-T1-GE3 | SI3552DV-T1-GE3CT-ND | 35R6216 | SI3552DV-T1-GE3 | SI3552DV-T1-GE3 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3552DV-T1-GE3 | FET, MOSFET Arrays | Dual N/p Channel Mosfet, 30V, Tsop; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; N and P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| IDSS | 2500 milliamps | 2500 milliamps | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
