Mosfet Array N and P-Channel 30V 2.5A 1.15W Surface Mount 6-TSOP
Mosfet Array N and P-Channel 30V 2.5A 1.15W Surface Mount 6-TSOP
Mosfet Array N and P-Channel 30V 2.5A 1.15W Surface Mount 6-TSOP
Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R Product overview: SI3552DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.5A, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.5A, 1.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3552DV-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET N/P-CH 30V 6-TSOP
Manufacturer: Vishay
Win Source Part Number: 136483-SI3552DV-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: SI3552DV
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 1.15W
Drain-Source Breakdown Voltage: 30V
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 3.2nC @ 5V
Maximum Rds On at Id,Vgs: 105 mOhm @ 2.5A, 10V
Alternative Parts (Cross-Reference): BSL316CL6327HTSA1; BSL316CH6327XTSA1; BSL316CL6327XT; BSL316C H6327;
Introduction Date: April 18, 2000
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
MOSFET N/P-CH 30V 2.5A 6TSOP
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DUAL N/P CHANNEL MOSFET, 30V, TSOP; Transistor Polarity:Complementa
DUAL N/P CHANNEL MOSFET, 30V, TSOP; Transistor Polarity:Complementa
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI3552DV-T1-GE3CT-ND | 278-SI3552DV-T1-GE3 | SI3552DV-T1-GE3 | 136483-SI3552DV-T1-GE3 | SI3552DV-T1-GE3 | SI3552DV-T1-GE3 | 35R6216 |
| Product Name | FET, MOSFET Arrays | 30V 2.5A 1.8A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3552DV-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Dual N/p Channel Mosfet, 30V, Tsop; Transistor Polarity Vishay |
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; 6-TSOP | TO-3 | |||
| Polarity | N-Channel; P-Channel | P-Channel; N and P-Channel | P-Channel | P-Channel | |||
| PD | 1150 milliwatts | 1150 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
