Vishay Precision Group FET, MOSFET Arrays SI3552DV-T1-GE3

Description
Mosfet Array N and P-Channel 30V 2.5A 1.15W Surface Mount 6-TSOP
Request a Quote Datasheet
Description
Mosfet Array N and P-Channel 30V 2.5A 1.15W Surface Mount 6-TSOP
Request a Quote Datasheet

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Product
Description
Supplier Links
FET, MOSFET Arrays - SI3552DV-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI3552DV-T1-GE3CT-ND
FET, MOSFET Arrays SI3552DV-T1-GE3CT-ND
Mosfet Array N and P-Channel 30V 2.5A 1.15W Surface Mount 6-TSOP

Mosfet Array N and P-Channel 30V 2.5A 1.15W Surface Mount 6-TSOP

Buy Now Datasheet
FET, MOSFET Arrays - SI3552DV-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI3552DV-T1-GE3DKR-ND
FET, MOSFET Arrays SI3552DV-T1-GE3DKR-ND
Mosfet Array N and P-Channel 30V 2.5A 1.15W Surface Mount 6-TSOP

Mosfet Array N and P-Channel 30V 2.5A 1.15W Surface Mount 6-TSOP

Buy Now Datasheet
FET, MOSFET Arrays - SI3552DV-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI3552DV-T1-GE3TR-ND
FET, MOSFET Arrays SI3552DV-T1-GE3TR-ND
Mosfet Array N and P-Channel 30V 2.5A 1.15W Surface Mount 6-TSOP

Mosfet Array N and P-Channel 30V 2.5A 1.15W Surface Mount 6-TSOP

Buy Now Datasheet
Singapore
30V 2.5A 1.8A MOSFET Transistor
278-SI3552DV-T1-GE3
30V 2.5A 1.8A MOSFET Transistor 278-SI3552DV-T1-GE3
Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R Product overview: SI3552DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.5A, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.5A, 1.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3552DV-T1-GE3 can be used for catalog matching and distributor lookup.

Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R Product overview: SI3552DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.5A, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.5A, 1.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3552DV-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - SI3552DV-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI3552DV-T1-GE3
FET, MOSFET Arrays SI3552DV-T1-GE3
MOSFET N/P-CH 30V 6-TSOP

MOSFET N/P-CH 30V 6-TSOP

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3552DV-T1-GE3 - 136483-SI3552DV-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3552DV-T1-GE3
136483-SI3552DV-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3552DV-T1-GE3 136483-SI3552DV-T1-GE3
Manufacturer: Vishay Win Source Part Number: 136483-SI3552DV-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Family Name: SI3552DV Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Maximum Power Dissipation: 1.15W Drain-Source Breakdown Voltage: 30V Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 3.2nC @ 5V Maximum Rds On at Id,Vgs: 105 mOhm @ 2.5A, 10V Alternative Parts (Cross-Reference): BSL316CL6327HTSA1; BSL316CH6327XTSA1; BSL316CL6327XT; BSL316C H6327; Introduction Date: April 18, 2000 ECCN: EAR99 Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 136483-SI3552DV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: SI3552DV
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 1.15W
Drain-Source Breakdown Voltage: 30V
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 3.2nC @ 5V
Maximum Rds On at Id,Vgs: 105 mOhm @ 2.5A, 10V
Alternative Parts (Cross-Reference): BSL316CL6327HTSA1; BSL316CH6327XTSA1; BSL316CL6327XT; BSL316C H6327;
Introduction Date: April 18, 2000
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3552DV-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3552DV-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3552DV-T1-GE3
MOSFET N/P-CH 30V 2.5A 6TSOP

MOSFET N/P-CH 30V 2.5A 6TSOP

Supplier's Site
Sheung Wan, Hong Kong
MOSFET -30V Vds 20V Vgs TSOP-6 N&P PAIR

MOSFET -30V Vds 20V Vgs TSOP-6 N&P PAIR

Buy Now Datasheet
Dual N/p Channel Mosfet, 30V, Tsop; Transistor Polarity Vishay - 35R6216 - Newark, An Avnet Company
Chicago, IL, United States
Dual N/p Channel Mosfet, 30V, Tsop; Transistor Polarity Vishay
35R6216
Dual N/p Channel Mosfet, 30V, Tsop; Transistor Polarity Vishay 35R6216
DUAL N/P CHANNEL MOSFET, 30V, TSOP; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.5A; On Resistance Rds(on):0.085ohm; Transistor Mounting:Surface Mount; Product Range:-RoHS Compliant: Yes

DUAL N/P CHANNEL MOSFET, 30V, TSOP; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.5A; On Resistance Rds(on):0.085ohm; Transistor Mounting:Surface Mount; Product Range:-RoHS Compliant: Yes

Supplier's Site Datasheet
Dual N/p Channel Mosfet, 30V, Tsop; Transistor Polarity Vishay - 35R0049 - Newark, An Avnet Company
Chicago, IL, United States
Dual N/p Channel Mosfet, 30V, Tsop; Transistor Polarity Vishay
35R0049
Dual N/p Channel Mosfet, 30V, Tsop; Transistor Polarity Vishay 35R0049
DUAL N/P CHANNEL MOSFET, 30V, TSOP; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.5A; On Resistance Rds(on):0.085ohm; Transistor Mounting:Surface Mount; Product Range:-RoHS Compliant: Yes

DUAL N/P CHANNEL MOSFET, 30V, TSOP; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.5A; On Resistance Rds(on):0.085ohm; Transistor Mounting:Surface Mount; Product Range:-RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI3552DV-T1-GE3CT-ND 278-SI3552DV-T1-GE3 SI3552DV-T1-GE3 136483-SI3552DV-T1-GE3 SI3552DV-T1-GE3 SI3552DV-T1-GE3 35R6216
Product Name FET, MOSFET Arrays 30V 2.5A 1.8A MOSFET Transistor FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3552DV-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Dual N/p Channel Mosfet, 30V, Tsop; Transistor Polarity Vishay
Package Type SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23; SOT-23-6 Thin, TSOT-23-6 SOT3; 6-TSOP TO-3
Polarity N-Channel; P-Channel P-Channel; N and P-Channel P-Channel P-Channel
PD 1150 milliwatts 1150 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Transistor Technology / Material MOSFET (Metal Oxide)
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