P-CH MOSFET 8V 5.3A 23mR TSOP Surface Mount Product overview: SI3499DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 8V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 8V, 5.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3499DV-T1-GE3 can be used for catalog matching and distributor lookup.
P-Channel 8V 5.3A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
P-Channel 8V 5.3A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
P-Channel 8V 5.3A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
Manufacturer: Vishay
Win Source Part Number: 042595-SI3499DV-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 5.3A (Ta)
Gate-Source Threshold Voltage: 750mV @ 250μA
Max Gate Charge: 42nC @ 4.5V
Maximum Gate-Source Voltage: ±5V
Maximum Rds On at Id,Vgs: 23 mOhm @ 7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management, Portable Devices
MOSFET P-CH 8V 5.3A 6TSOP
P CHANNEL MOSFET, -8V, 7A, TSOP; Channel Type:P Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:350mV RoHS Compliant: Yes
P CHANNEL MOSFET, -8V, 7A, TSOP, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:350mV RoHS Compliant: Yes
MOSFET 8.0V 7.0A 2.0W 23mohm @ 4.5V
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI3499DV-T1-GE3 | SI3499DV-T1-GE3DKR-ND | 042595-SI3499DV-T1-GE3 | SI3499DV-T1-GE3 | 35R6214 | SI3499DV-T1-GE3 |
| Product Name | SMD 8V 5.3A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3499DV-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -8V, 7A, Tsop; Channel Type Vishay | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||
| PD | 1100 milliwatts | 1100 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; SOT23; 6-TSOP | Surface Mount | TO-3 |
