P-Channel 20V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP
Small Signal Field-Effect Transistor, Product overview: SI3493DDV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3493DDV-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 894484-SI3493DDV-T1-
Series: TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 20 V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP
Package: SOT-23-6 Thin, TSOT-23-6
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI3493
Categories: Discrete Semiconductor Products
Case / Package: 6-TSOP
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SI3493DDV-T1-GE3TR, SI3493DDV-T1-GE3DKR,
MOSFET P-CHANNEL 20V 8A 6TSOP
MOSFET P-CHANNEL 20V 8A 6TSOP
MOSFET -20V Vds 8V Vgs TSOP-6
MOSFET, P-CH, 20V, 8A, 150DEG C, 3.6W; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
| DigiKey | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI3493DDV-T1-GE3TR-ND | 1349713P | 1349713 | 278-SI3493DDV-T1-GE3 | 894484-SI3493DDV-T1-GE3 | SI3493DDV-T1-GE3 | SI3493DDV-T1-GE3 | SI3493DDV-T1-GE3 | 15AC8651 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3493DDV-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, P-Ch, 20V, 8A, 150Deg C, 3.6W; Channel Type Vishay |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||||
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 | TSOP | Tsop | SOT3; 6-TSOP | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | TO-3 | ||
| MOSFET Operating Mode | Enhancement | ||||||||
| Number of units in IC | 1 | ||||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
