Manufacturer: Vishay
Win Source Part Number: 894484-SI3493DDV-T1-
Series: TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 20 V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP
Package: SOT-23-6 Thin, TSOT-23-6
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI3493
Categories: Discrete Semiconductor Products
Case / Package: 6-TSOP
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SI3493DDV-T1-GE3TR, SI3493DDV-T1-GE3DKR,
Small Signal Field-Effect Transistor, Product overview: SI3493DDV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3493DDV-T1-GE3
P-Channel 20V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP
MOSFET P-CHANNEL 20V 8A 6TSOP
MOSFET, P-CH, 20V, 8A, 150DEG C, 3.6W; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET P-CHANNEL 20V 8A 6TSOP
MOSFET -20V Vds 8V Vgs TSOP-6
| RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1349713P | 1349713 | 894484-SI3493DDV-T1-GE3 | 278-SI3493DDV-T1-GE3 | SI3493DDV-T1-GE3TR-ND | SI3493DDV-T1-GE3 | 15AC8651 | SI3493DDV-T1-GE3 | SI3493DDV-T1-GE3 |
| Product Name | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3493DDV-T1-GE3 | MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, 20V, 8A, 150Deg C, 3.6W; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Package Type | TSOP | Tsop | SOT3; 6-TSOP | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | TO-3 | SOT23; SOT-23-6 Thin, TSOT-23-6 | ||
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||||
| MOSFET Operating Mode | Enhancement | ||||||||
| Number of units in IC | 1 | ||||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
