Vishay Intertechnology, Inc. Single FETs, MOSFETs SI3493BDV-T1-GE3

Description
P-Channel 20V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP
Request a Quote Datasheet
Description
P-Channel 20V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI3493BDV-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3493BDV-T1-GE3DKR-ND
Single FETs, MOSFETs SI3493BDV-T1-GE3DKR-ND
P-Channel 20V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP

P-Channel 20V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - SI3493BDV-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3493BDV-T1-GE3TR-ND
Single FETs, MOSFETs SI3493BDV-T1-GE3TR-ND
P-Channel 20V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP

P-Channel 20V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - SI3493BDV-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3493BDV-T1-GE3CT-ND
Single FETs, MOSFETs SI3493BDV-T1-GE3CT-ND
P-Channel 20V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP

P-Channel 20V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3493BDV-T1-GE3 - 064456-SI3493BDV-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3493BDV-T1-GE3
064456-SI3493BDV-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3493BDV-T1-GE3 064456-SI3493BDV-T1-GE3
Manufacturer: Vishay Win Source Part Number: 064456-SI3493BDV-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 43.5nC @ 5V Max Input Capacitance: 1805pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 27.5 mOhm @ 7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Vishay
Win Source Part Number: 064456-SI3493BDV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 43.5nC @ 5V
Max Input Capacitance: 1805pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 27.5 mOhm @ 7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - SI3493BDV-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI3493BDV-T1-GE3
Single FETs, MOSFETs SI3493BDV-T1-GE3
MOSFET P-CH 20V 8A 6TSOP

MOSFET P-CH 20V 8A 6TSOP

Supplier's Site Datasheet
Singapore
20V 7A MOSFET Transistor
278-SI3493BDV-T1-GE3
20V 7A MOSFET Transistor 278-SI3493BDV-T1-GE3
P-CH JFET, 20V, 7A, 27.5mR RdsOn, TSOP Product overview: SI3493BDV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3493BDV-T1-GE3 can be used for catalog matching and distributor lookup.

P-CH JFET, 20V, 7A, 27.5mR RdsOn, TSOP Product overview: SI3493BDV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3493BDV-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET 20V 8.0A 2.97W 27.5mohm @ 4.5V

MOSFET 20V 8.0A 2.97W 27.5mohm @ 4.5V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3493BDV-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3493BDV-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3493BDV-T1-GE3
MOSFET P-CH 20V 8A 6TSOP

MOSFET P-CH 20V 8A 6TSOP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI3493BDV-T1-GE3DKR-ND 064456-SI3493BDV-T1-GE3 SI3493BDV-T1-GE3 278-SI3493BDV-T1-GE3 SI3493BDV-T1-GE3 SI3493BDV-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3493BDV-T1-GE3 Single FETs, MOSFETs 20V 7A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel P-Channel
Package Type SOT23; SOT-23-6 Thin, TSOT-23-6 SOT3; SOT23; 6-TSOP SOT23; SOT-23-6 Thin, TSOT-23-6 Surface Mount
V(BR)DSS 20 volts 20 volts
PD 2080 to 2970 milliwatts 2080 milliwatts 2970 milliwatts
Unlock Full Specs
to access all available technical data