MOSFET P-CH 20V 8A 6TSOP
P-Channel 20V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP
P-Channel 20V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP
P-Channel 20V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP
Manufacturer: Vishay
Win Source Part Number: 028438-SI3493BDV-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 43.5nC @ 5V
Max Input Capacitance: 1805pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 27.5 mOhm @ 7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs
MOSFET P-CH 20V 8A 6TSOP
MOSFET 20V 8.0A 2.97W 27.5mohm @ 4.5V
MOSFET, P CHANNEL, -20V, -8A, TSOP-6; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:1.8V; Gate Source Threshold Voltage Max:400mV RoHS Compliant: Yes
P CHANNEL MOSFET, -20V, 8A, TSOP, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:8V; Gate Source Threshold Voltage Max:900mV RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI3493BDV-T1-E3 | SI3493BDV-T1-E3TR-ND | 028438-SI3493BDV-T1-E3 | SI3493BDV-T1-E3 | SI3493BDV-T1-E3 | 69W7191 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3493BDV-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P Channel, -20V, -8A, Tsop-6; Channel Type Vishay |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 20 volts | 20 volts | ||||
| IDSS | 8000 milliamps | 8000 milliamps |
