Manufacturer: Vishay
Win Source Part Number: 028438-SI3493BDV-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 43.5nC @ 5V
Max Input Capacitance: 1805pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 27.5 mOhm @ 7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs
P-Channel MOSFET, 20V, 7A, 27.5mR, TSOP Product overview: SI3493BDV-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3493BDV-T1-E3 can be used for catalog matching and distributor lookup.
P-Channel 20V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP
P-Channel 20V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP
P-Channel 20V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP
MOSFET P-CH 20V 8A 6TSOP
MOSFET P-CH 20V 8A 6TSOP
MOSFET, P CHANNEL, -20V, -8A, TSOP-6; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:1.8V; Gate Source Threshold Voltage Max:400mV RoHS Compliant: Yes
P CHANNEL MOSFET, -20V, 8A, TSOP, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:8V; Gate Source Threshold Voltage Max:900mV RoHS Compliant: Yes
MOSFET 20V 8.0A 2.97W 27.5mohm @ 4.5V
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028438-SI3493BDV-T1-E3 | 278-SI3493BDV-T1-E3 | SI3493BDV-T1-E3TR-ND | SI3493BDV-T1-E3 | SI3493BDV-T1-E3 | 69W7191 | SI3493BDV-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3493BDV-T1-E3 | P-Channel 20V 7A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Channel, -20V, -8A, Tsop-6; Channel Type Vishay | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||
| V(BR)DSS | 20 volts | 20 volts | |||||
| PD | 2080 to 2970 milliwatts | 2970 milliwatts | 2080 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
