Manufacturer: Vishay
Win Source Part Number: 189816-SI3493BDV-T1-
Category: Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: TrenchFET
Packaging: Reel(TR)
Mounting Style: SMD/SMT
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: SOT-23-6 Thin, TSOT-23-6
Manufacturer Device Package: 6-TSOP
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 27.5 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250μA
Gate Charge (Qg) @ Vgs: 43.5nC @ 5V
Input Capacitance (Ciss) @ Vds: 1805pF @ 10V
Power - Max: 2.97W
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
MOSFET P-CH 20V 8A 6-TSOP Product overview: SI3493BDV-T1-E3-S from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3493BDV-T1-E3-
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 189816-SI3493BDV-T1-E3-S | 278-SI3493BDV-T1-E3-S |
| Product Name | Discrete Semiconductor Products | 20V 8A MOSFET Transistor |
| Polarity | P-Channel |