The Si3483CDV-T1-GE3 is a P-channel MOSFET in a TSOP-6 package, measuring 3 mm by 2.85 mm, designed for load switching applications. It carries a drain-source voltage rating of -30 V and a continuous drain current of -6.1 A at 25 °C ambient temperature, limited by the package. Its drain-source on-state resistance is 0.034 Ω at -10 V gate-source voltage and 0.053 Ω at -4.5 V. The gate threshold voltage ranges from -1.0 V to -3.0 V, and total gate charge is 11.5 nC. The device is RoHS compliant and halogen-free according to IEC 61249-2-21, with an operating junction temperature range of -55 °C to 150 °C.
P CHANNEL MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; No. of Pins:6Pins RoHS Compliant: No
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 26AC3324 |
| Product Name | P Channel Mosfet, Full Reel; Channel Type Vishay |
| Polarity | P-Channel |
