Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3477DV-T1-GE3 SI3477DV-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1095854-SI3477DV-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Family Name: Si3477DV Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 90nC @ 10V Max Input Capacitance: 2600pF @ 6V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 17.5 mOhm @ 9A, 4.5V Alternative Parts (Cross-Reference): RZQ050P01; RZQ050P01TR; MCH6351-TL-W; Introduction Date: July 16, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1095854-SI3477DV-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Family Name: Si3477DV Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 90nC @ 10V Max Input Capacitance: 2600pF @ 6V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 17.5 mOhm @ 9A, 4.5V Alternative Parts (Cross-Reference): RZQ050P01; RZQ050P01TR; MCH6351-TL-W; Introduction Date: July 16, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3477DV-T1-GE3 - 1095854-SI3477DV-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3477DV-T1-GE3
1095854-SI3477DV-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3477DV-T1-GE3 1095854-SI3477DV-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1095854-SI3477DV-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Family Name: Si3477DV Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 90nC @ 10V Max Input Capacitance: 2600pF @ 6V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 17.5 mOhm @ 9A, 4.5V Alternative Parts (Cross-Reference): RZQ050P01; RZQ050P01TR; MCH6351-TL-W; Introduction Date: July 16, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 1095854-SI3477DV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Family Name: Si3477DV
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 90nC @ 10V
Max Input Capacitance: 2600pF @ 6V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 17.5 mOhm @ 9A, 4.5V
Alternative Parts (Cross-Reference): RZQ050P01; RZQ050P01TR; MCH6351-TL-W;
Introduction Date: July 16, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SI3477DV-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI3477DV-T1-GE3
Single FETs, MOSFETs SI3477DV-T1-GE3
MOSFET P-CH 12V 8A 6TSOP

MOSFET P-CH 12V 8A 6TSOP

Supplier's Site Datasheet
Singapore
SMD -12V 8A MOSFET Transistor
278-SI3477DV-T1-GE3
SMD -12V 8A MOSFET Transistor 278-SI3477DV-T1-GE3
P-Ch MOSFET, -12V, 17.5mR, 8A, TSOP, Surface Mount Product overview: SI3477DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, -12V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -12V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3477DV-T1-GE3 can be used for catalog matching and distributor lookup.

P-Ch MOSFET, -12V, 17.5mR, 8A, TSOP, Surface Mount Product overview: SI3477DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, -12V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -12V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3477DV-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI3477DV-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3477DV-T1-GE3DKR-ND
Single FETs, MOSFETs SI3477DV-T1-GE3DKR-ND
P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - SI3477DV-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3477DV-T1-GE3CT-ND
Single FETs, MOSFETs SI3477DV-T1-GE3CT-ND
P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - SI3477DV-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3477DV-T1-GE3TR-ND
Single FETs, MOSFETs SI3477DV-T1-GE3TR-ND
P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3477DV-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3477DV-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3477DV-T1-GE3
MOSFET P-CH 12V 8A 6TSOP

MOSFET P-CH 12V 8A 6TSOP

Supplier's Site
Sheung Wan, Hong Kong
MOSFET -12V Vds 10V Vgs TSOP-6

MOSFET -12V Vds 10V Vgs TSOP-6

Buy Now Datasheet
Mosfet, P-Ch, -12V, -8A, Tsop; Transistor Polarity Vishay - 61AC1932 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -12V, -8A, Tsop; Transistor Polarity Vishay
61AC1932
Mosfet, P-Ch, -12V, -8A, Tsop; Transistor Polarity Vishay 61AC1932
MOSFET, P-CH, -12V, -8A, TSOP; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes

MOSFET, P-CH, -12V, -8A, TSOP; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, P Channel, -12V, -8A, Tsop-6, Full Reel; Channel Type Vishay - 86R3876 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -12V, -8A, Tsop-6, Full Reel; Channel Type Vishay
86R3876
Mosfet, P Channel, -12V, -8A, Tsop-6, Full Reel; Channel Type Vishay 86R3876
MOSFET, P CHANNEL, -12V, -8A, TSOP-6, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:4.2W RoHS Compliant: Yes

MOSFET, P CHANNEL, -12V, -8A, TSOP-6, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:4.2W RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1095854-SI3477DV-T1-GE3 SI3477DV-T1-GE3 278-SI3477DV-T1-GE3 SI3477DV-T1-GE3DKR-ND SI3477DV-T1-GE3 SI3477DV-T1-GE3 61AC1932 86R3876
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3477DV-T1-GE3 Single FETs, MOSFETs SMD -12V 8A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, P-Ch, -12V, -8A, Tsop; Transistor Polarity Vishay Mosfet, P Channel, -12V, -8A, Tsop-6, Full Reel; Channel Type Vishay
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel
V(BR)DSS 12 volts 12 volts
PD 2000 to 4200 milliwatts 2000 milliwatts 4200 milliwatts 4200 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Package Type SOT3; SOT23; 6-TSOP SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23; SOT-23-6 Thin, TSOT-23-6 TO-3 TO-3
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