P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
MOSFET P-CH 12V 8A 6TSOP
Manufacturer: Vishay
Win Source Part Number: 1095854-SI3477DV-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Family Name: Si3477DV
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 90nC @ 10V
Max Input Capacitance: 2600pF @ 6V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 17.5 mOhm @ 9A, 4.5V
Alternative Parts (Cross-Reference): RZQ050P01; RZQ050P01TR; MCH6351-TL-W;
Introduction Date: July 16, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
P-Ch MOSFET, -12V, 17.5mR, 8A, TSOP, Surface Mount Product overview: SI3477DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, -12V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -12V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3477DV-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET -12V Vds 10V Vgs TSOP-6
MOSFET, P-CH, -12V, -8A, TSOP; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power RoHS Compliant: Yes
MOSFET, P CHANNEL, -12V, -8A, TSOP-6, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:4.2W RoHS Compliant: Yes
MOSFET P-CH 12V 8A 6TSOP
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI3477DV-T1-GE3DKR-ND | SI3477DV-T1-GE3 | 1095854-SI3477DV-T1-GE3 | 278-SI3477DV-T1-GE3 | SI3477DV-T1-GE3 | 61AC1932 | 86R3876 | SI3477DV-T1-GE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3477DV-T1-GE3 | SMD -12V 8A MOSFET Transistor | MOSFET | Mosfet, P-Ch, -12V, -8A, Tsop; Transistor Polarity Vishay | Mosfet, P Channel, -12V, -8A, Tsop-6, Full Reel; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; SOT23; 6-TSOP | TO-3 | TO-3 | SOT23; SOT-23-6 Thin, TSOT-23-6 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 12 volts | 12 volts | ||||||
| IDSS | 8000 milliamps | -8000 milliamps | 8000 milliamps |
