Small Signal Field-Effect Transistor, 4.6A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6 Product overview: SI3476DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 4.6A, 80V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4.6A, 80V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3476DV-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1095853-SI3476DV-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 4.6A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 7.5nC @ 10V
Max Input Capacitance: 195pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 93 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
N-channel MOSFET 80V 4.6A 93mOhm SOT-23
N-channel MOSFET 80V 4.6A 93mOhm SOT-23
N-channel MOSFET 80V 4.6A 93mOhm SOT-23
N-Channel 80V 4.6A (Tc) 2W (Ta), 3.6W (Tc) Surface Mount 6-TSOP
N-Channel 80V 4.6A (Tc) 2W (Ta), 3.6W (Tc) Surface Mount 6-TSOP
N-Channel 80V 4.6A (Tc) 2W (Ta), 3.6W (Tc) Surface Mount 6-TSOP
MOSFET N-CH 80V 4.6A 6TSOP
MOSFET N-CH 80V 4.6A 6TSOP
MOSFET 80V Vds 20V Vgs TSOP-6
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI3476DV-T1-GE3 | 1095853-SI3476DV-T1-GE3 | 1526369P | 1526369 | SI3476DV-T1-GE3DKR-ND | SI3476DV-T1-GE3 | SI3476DV-T1-GE3 | SI3476DV-T1-GE3 |
| Product Name | N-Channel 4.6A 80V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3476DV-T1-GE3 | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| PD | 3600 milliwatts | 2000 to 3600 milliwatts | 2000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| V(BR)DSS | 80 volts | 80 volts | ||||||
| Package Type | SOT3; SOT23; 6-TSOP | SOT23; SOT-23 | SOT23; Sot-23 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | Surface Mount |
