N-Channel 100V 3.8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP
N-Channel 100V 3.8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP
N-Channel 100V 3.8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP
N-Channel JFET, 100V, 3.8A, 126mR Rds(on), TSOP Product overview: SI3474DV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 3.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 3.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3474DV-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 3.8A 6TSOP
Manufacturer: Vishay
Win Source Part Number: 1095850-SI3474DV-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 3.8A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 10.4nC @ 10V
Max Input Capacitance: 196pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 126 mOhm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
MOSFET N-CH 100V 3.8A 6TSOP
MOSFET Transistor, N Channel, 3.8 A, 100 V, 0.102 ohm, 10 V RoHS Compliant: Yes
MOSFET 100V Vds 20V Vgs TSOP-6
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI3474DV-T1-GE3DKR-ND | 278-SI3474DV-T1-GE3 | SI3474DV-T1-GE3 | 1095850-SI3474DV-T1-GE3 | SI3474DV-T1-GE3 | 40X8698 | SI3474DV-T1-GE3 |
| Product Name | Single FETs, MOSFETs | N-Channel 100V 3.8A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3474DV-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 3.8 A, 100 V, 0.102 Ohm, 10 V Rohs Compliant Vishay | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; SOT23; 6-TSOP | SOT23; SOT-23-6 Thin, TSOT-23-6 | TO-3 | ||
| PD | 3600 milliwatts | 3600 milliwatts | 3600 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
