MOSFET P-CHANNEL 12V 8A 6TSOP
Manufacturer: Vishay
Win Source Part Number: 894478-SI3473DDV-T1-
Series: TrenchFET® Gen III
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 12 V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP
Package: SOT-23-6 Thin, TSOT-23-6
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI3473
Categories: Discrete Semiconductor Products
Case / Package: 6-TSOP
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SI3473DDV-T1-GE3CT, SI3473DDV-T1-GE3TR, SI3473DDV-T1-GE3DKR
P-Channel 12V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP
P-Channel 12V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP
P-Channel 12V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP
MOSFET, P-CH, -12V, -8A, 150DEG C, 3.6W; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.0145ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; PowerRoHS Compliant: Yes
MOSFET P-CHANNEL 12V 8A 6TSOP
MOSFET P-CHANNEL 12V 8A 6TSOP
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI3473DDV-T1-GE3 | 894478-SI3473DDV-T1-GE3 | SI3473DDV-T1-GE3CT-ND | 78AC6538 | 880-SI3473DDV-T1-GE3 | SI3473DDV-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3473DDV-T1-GE3 | Single FETs, MOSFETs | Mosfet, P-Ch, -12V, -8A, 150Deg C, 3.6W; Transistor Polarity Vishay | MOSFET P-CHANNEL 12V 8A 6TSOP | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 12 volts | |||||
| IDSS | 8000 milliamps | -8000 milliamps | ||||
| PD | 3600 milliwatts | 3600 milliwatts |
