MOSFET P-CH 12V 8A 6TSOP
P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
P-Channel JFET, 12V, 8A, 22mR, TSOP, Surface Mount Product overview: SI3473CDV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, 12V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 12V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3473CDV-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 109259-SI3473CDV-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 65nC @ 8V
Max Input Capacitance: 2010pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 22 mOhm @ 8.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
MOSFET -12V Vds 8V Vgs TSOP-6
MOSFET, P CHANNEL, -12V, -8A, TSOP-6, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:4.2W RoHS Compliant: Yes
MOSFET, P-CH, 12V, 8A, 150DEG C, 4.2W; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET P-CH 12V 8A 6TSOP
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI3473CDV-T1-GE3 | SI3473CDV-T1-GE3CT-ND | 278-SI3473CDV-T1-GE3 | 109259-SI3473CDV-T1-GE3 | SI3473CDV-T1-GE3 | 15R4954 | 10AC9118 | SI3473CDV-T1-GE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | P-Channel SMD 12V 8A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3473CDV-T1-GE3 | MOSFET | Mosfet, P Channel, -12V, -8A, Tsop-6, Full Reel; Channel Type Vishay | Mosfet, P-Ch, 12V, 8A, 150Deg C, 4.2W; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 12 volts | 12 volts | ||||||
| IDSS | 8000 milliamps | 8000 milliamps | 8000 milliamps |
