Vishay Precision Group Single FETs, MOSFETs SI3473CDV-T1-GE3

Description
MOSFET P-CH 12V 8A 6TSOP
Request a Quote Datasheet
Description
MOSFET P-CH 12V 8A 6TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI3473CDV-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI3473CDV-T1-GE3
Single FETs, MOSFETs SI3473CDV-T1-GE3
MOSFET P-CH 12V 8A 6TSOP

MOSFET P-CH 12V 8A 6TSOP

Supplier's Site Datasheet
Singapore
P-Channel SMD 12V 8A MOSFET Transistor
278-SI3473CDV-T1-GE3
P-Channel SMD 12V 8A MOSFET Transistor 278-SI3473CDV-T1-GE3
P-Channel JFET, 12V, 8A, 22mR, TSOP, Surface Mount Product overview: SI3473CDV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, 12V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 12V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3473CDV-T1-GE3 can be used for catalog matching and distributor lookup.

P-Channel JFET, 12V, 8A, 22mR, TSOP, Surface Mount Product overview: SI3473CDV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, 12V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 12V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3473CDV-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI3473CDV-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3473CDV-T1-GE3CT-ND
Single FETs, MOSFETs SI3473CDV-T1-GE3CT-ND
P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - SI3473CDV-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3473CDV-T1-GE3DKR-ND
Single FETs, MOSFETs SI3473CDV-T1-GE3DKR-ND
P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - SI3473CDV-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3473CDV-T1-GE3TR-ND
Single FETs, MOSFETs SI3473CDV-T1-GE3TR-ND
P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3473CDV-T1-GE3 - 109259-SI3473CDV-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3473CDV-T1-GE3
109259-SI3473CDV-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3473CDV-T1-GE3 109259-SI3473CDV-T1-GE3
Manufacturer: Vishay Win Source Part Number: 109259-SI3473CDV-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 65nC @ 8V Max Input Capacitance: 2010pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 22 mOhm @ 8.1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 109259-SI3473CDV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 65nC @ 8V
Max Input Capacitance: 2010pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 22 mOhm @ 8.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Mosfet, P Channel, -12V, -8A, Tsop-6, Full Reel; Channel Type Vishay - 15R4954 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -12V, -8A, Tsop-6, Full Reel; Channel Type Vishay
15R4954
Mosfet, P Channel, -12V, -8A, Tsop-6, Full Reel; Channel Type Vishay 15R4954
MOSFET, P CHANNEL, -12V, -8A, TSOP-6, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:4.2W RoHS Compliant: Yes

MOSFET, P CHANNEL, -12V, -8A, TSOP-6, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:4.2W RoHS Compliant: Yes

Supplier's Site
Mosfet, P-Ch, 12V, 8A, 150Deg C, 4.2W; Channel Type Vishay - 10AC9118 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 12V, 8A, 150Deg C, 4.2W; Channel Type Vishay
10AC9118
Mosfet, P-Ch, 12V, 8A, 150Deg C, 4.2W; Channel Type Vishay 10AC9118
MOSFET, P-CH, 12V, 8A, 150DEG C, 4.2W; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

MOSFET, P-CH, 12V, 8A, 150DEG C, 4.2W; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

Supplier's Site
MOSFET -12V Vds 8V Vgs TSOP-6

MOSFET -12V Vds 8V Vgs TSOP-6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3473CDV-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3473CDV-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3473CDV-T1-GE3
MOSFET P-CH 12V 8A 6TSOP

MOSFET P-CH 12V 8A 6TSOP

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI3473CDV-T1-GE3 278-SI3473CDV-T1-GE3 SI3473CDV-T1-GE3CT-ND 109259-SI3473CDV-T1-GE3 15R4954 10AC9118 SI3473CDV-T1-GE3 SI3473CDV-T1-GE3
Product Name Single FETs, MOSFETs P-Channel SMD 12V 8A MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3473CDV-T1-GE3 Mosfet, P Channel, -12V, -8A, Tsop-6, Full Reel; Channel Type Vishay Mosfet, P-Ch, 12V, 8A, 150Deg C, 4.2W; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel; P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 12 volts 12 volts
IDSS 8000 milliamps 8000 milliamps 8000 milliamps
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