Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3473CDV-T1-E3 SI3473CDV-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 028436-SI3473CDV-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Family Name: Si3473CDV Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 65nC @ 8V Max Input Capacitance: 2010pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 22 mOhm @ 8.1A, 4.5V Alternative Parts (Cross-Reference): RAL045P01TCR; MCH6351-TL-W; RAQ045P01TCR; RAQ045P01TR; Introduction Date: April 17, 2008 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 028436-SI3473CDV-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Family Name: Si3473CDV Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 65nC @ 8V Max Input Capacitance: 2010pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 22 mOhm @ 8.1A, 4.5V Alternative Parts (Cross-Reference): RAL045P01TCR; MCH6351-TL-W; RAQ045P01TCR; RAQ045P01TR; Introduction Date: April 17, 2008 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3473CDV-T1-E3 - 028436-SI3473CDV-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3473CDV-T1-E3
028436-SI3473CDV-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3473CDV-T1-E3 028436-SI3473CDV-T1-E3
Manufacturer: Vishay Win Source Part Number: 028436-SI3473CDV-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Family Name: Si3473CDV Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 65nC @ 8V Max Input Capacitance: 2010pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 22 mOhm @ 8.1A, 4.5V Alternative Parts (Cross-Reference): RAL045P01TCR; MCH6351-TL-W; RAQ045P01TCR; RAQ045P01TR; Introduction Date: April 17, 2008 ECCN: EAR99 Country of Origin: China, Taiwan Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 028436-SI3473CDV-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Family Name: Si3473CDV
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 65nC @ 8V
Max Input Capacitance: 2010pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 22 mOhm @ 8.1A, 4.5V
Alternative Parts (Cross-Reference): RAL045P01TCR; MCH6351-TL-W; RAQ045P01TCR; RAQ045P01TR;
Introduction Date: April 17, 2008
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SI3473CDV-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI3473CDV-T1-E3
Single FETs, MOSFETs SI3473CDV-T1-E3
MOSFET P-CH 12V 8A 6TSOP

MOSFET P-CH 12V 8A 6TSOP

Supplier's Site Datasheet
Single FETs, MOSFETs - SI3473CDV-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3473CDV-T1-E3CT-ND
Single FETs, MOSFETs SI3473CDV-T1-E3CT-ND
P-Channel 12V 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP

P-Channel 12V 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - SI3473CDV-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3473CDV-T1-E3DKR-ND
Single FETs, MOSFETs SI3473CDV-T1-E3DKR-ND
P-Channel 12V 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP

P-Channel 12V 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - SI3473CDV-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3473CDV-T1-E3TR-ND
Single FETs, MOSFETs SI3473CDV-T1-E3TR-ND
P-Channel 12V 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP

P-Channel 12V 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3473CDV-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3473CDV-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3473CDV-T1-E3
MOSFET P-CH 12V 8A 6TSOP

MOSFET P-CH 12V 8A 6TSOP

Supplier's Site
Sheung Wan, Hong Kong
MOSFET -12V Vds 8V Vgs TSOP-6

MOSFET -12V Vds 8V Vgs TSOP-6

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 028436-SI3473CDV-T1-E3 SI3473CDV-T1-E3 SI3473CDV-T1-E3CT-ND SI3473CDV-T1-E3 SI3473CDV-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3473CDV-T1-E3 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 12 volts 12 volts
PD 2000 to 4200 milliwatts 4200 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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