Vishay Intertechnology, Inc. MOSFET SI3471DV-T1-GE3

Description
MOSFET 12V 6.8A 2.0W 31mohm @ 4.5V
Description
MOSFET 12V 6.8A 2.0W 31mohm @ 4.5V
Datasheet
Datasheet Summary
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P-Channel 12-V MOSFET in a TSOP-6 package, measuring 3 mm by 2.85 mm, designed for load and PA switching applications. It has a drain-source on-state resistance of 0.031 Ω at V_GS = -4.5 V and supports a continuous drain current of 6.8 A at 25 °C. The device is RoHS compliant and halogen-free per IEC 61249-2-21, with an operating junction temperature range of -55 °C to 150 °C and a maximum junction-to-ambient thermal resistance of 90 °C/W when mounted on a 1" x 1" FR4 board.

Datasheet Summary
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P-Channel 12-V MOSFET in a TSOP-6 package, measuring 3 mm by 2.85 mm, designed for load and PA switching applications. It has a drain-source on-state resistance of 0.031 Ω at V_GS = -4.5 V and supports a continuous drain current of 6.8 A at 25 °C. The device is RoHS compliant and halogen-free per IEC 61249-2-21, with an operating junction temperature range of -55 °C to 150 °C and a maximum junction-to-ambient thermal resistance of 90 °C/W when mounted on a 1" x 1" FR4 board.

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Sheung Wan, Hong Kong
MOSFET 12V 6.8A 2.0W 31mohm @ 4.5V

MOSFET 12V 6.8A 2.0W 31mohm @ 4.5V

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI3471DV-T1-GE3
Product Name MOSFET
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