Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3471DV-T1-E3 SI3471DV-T1-E3

Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092826-SI3471DV-T1- E3 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): -12 V Power Dissipation: 1.1 W Rise Time: 50 ns Fall Time: 50 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TSOP Popularity: Low Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 1.1 W Continuous Drain Current (ID): 5.1 A Drain to Source Breakdown Voltage: 12 V Turn-Off Delay Time: 125 ns Drain to Source Resistance: 31 mΩ Gate to Source Voltage (Vgs): 8 V