Vishay Intertechnology, Inc. MOSFET SI3471CDV-T1-GE3

Description
MOSFET 12V 8.0A 3.8W 27mohm @ 4.5V
Description
MOSFET 12V 8.0A 3.8W 27mohm @ 4.5V
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P-channel 12-V MOSFET in a TSOP-6 package, rated for continuous drain current up to -8 A at 25 °C case temperature and 2.2 W power dissipation at 25 °C ambient, with RDS(on) of 0.027 Ω at -4.5 V gate-source voltage. Compliant with RoHS Directive 2002/95/EC and IEC 61249-2-21 halogen-free standards. Operating junction temperature range is -55 °C to 150 °C. Designed for load and PA switch applications.

Datasheet Summary
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P-channel 12-V MOSFET in a TSOP-6 package, rated for continuous drain current up to -8 A at 25 °C case temperature and 2.2 W power dissipation at 25 °C ambient, with RDS(on) of 0.027 Ω at -4.5 V gate-source voltage. Compliant with RoHS Directive 2002/95/EC and IEC 61249-2-21 halogen-free standards. Operating junction temperature range is -55 °C to 150 °C. Designed for load and PA switch applications.

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MOSFET 12V 8.0A 3.8W 27mohm @ 4.5V

MOSFET 12V 8.0A 3.8W 27mohm @ 4.5V

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI3471CDV-T1-GE3
Product Name MOSFET
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