P-Channel 20V 5A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
MOSFET P-CH 20V 5A 6TSOP Product overview: SI3469DV-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3469DV-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 20V 5A 6TSOP
Manufacturer: Vishay
Win Source Part Number: 1095848-SI3469DV-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.14W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 30nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 30 mOhm @ 6.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient
MOSFET 20V 6.7A 2.0W 30mohm @ 10V
P CHANNEL MOSFET, -20V, 6.7A, TSOP; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET P-CH 20V 5A 6TSOP
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI3469DV-T1-GE3TR-ND | 278-SI3469DV-T1-GE3 | SI3469DV-T1-GE3 | 1095848-SI3469DV-T1-GE3 | SI3469DV-T1-GE3 | 35R6212 | SI3469DV-T1-GE3 |
| Product Name | Single FETs, MOSFETs | 20V 5A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3469DV-T1-GE3 | MOSFET | P Channel Mosfet, -20V, 6.7A, Tsop; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | ||
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; SOT23; 6-TSOP | TO-3 | SOT23; SOT-23-6 Thin, TSOT-23-6 | |
| MOSFET Operating Mode | Enhancement | ||||||
| PD | 2 milliwatts | 1140 milliwatts | 1140 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
