Vishay Intertechnology, Inc. Single FETs, MOSFETs SI3469DV-T1-GE3

Description
P-Channel 20V 5A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
Request a Quote Datasheet
Description
P-Channel 20V 5A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI3469DV-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3469DV-T1-GE3TR-ND
Single FETs, MOSFETs SI3469DV-T1-GE3TR-ND
P-Channel 20V 5A (Ta) 1.14W (Ta) Surface Mount 6-TSOP

P-Channel 20V 5A (Ta) 1.14W (Ta) Surface Mount 6-TSOP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3469DV-T1-GE3 - 1095848-SI3469DV-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3469DV-T1-GE3
1095848-SI3469DV-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3469DV-T1-GE3 1095848-SI3469DV-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1095848-SI3469DV-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.14W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 5A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 30nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 30 mOhm @ 6.7A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1095848-SI3469DV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.14W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 30nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 30 mOhm @ 6.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SI3469DV-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI3469DV-T1-GE3
Single FETs, MOSFETs SI3469DV-T1-GE3
MOSFET P-CH 20V 5A 6TSOP

MOSFET P-CH 20V 5A 6TSOP

Supplier's Site Datasheet
P Channel Mosfet, -20V, 6.7A, Tsop; Channel Type Vishay - 35R6212 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -20V, 6.7A, Tsop; Channel Type Vishay
35R6212
P Channel Mosfet, -20V, 6.7A, Tsop; Channel Type Vishay 35R6212
P CHANNEL MOSFET, -20V, 6.7A, TSOP; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

P CHANNEL MOSFET, -20V, 6.7A, TSOP; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 20V 6.7A 2.0W 30mohm @ 10V

MOSFET 20V 6.7A 2.0W 30mohm @ 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3469DV-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3469DV-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3469DV-T1-GE3
MOSFET P-CH 20V 5A 6TSOP

MOSFET P-CH 20V 5A 6TSOP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI3469DV-T1-GE3TR-ND 1095848-SI3469DV-T1-GE3 SI3469DV-T1-GE3 35R6212 SI3469DV-T1-GE3 SI3469DV-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3469DV-T1-GE3 Single FETs, MOSFETs P Channel Mosfet, -20V, 6.7A, Tsop; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel P-Channel
Package Type SOT23; SOT-23-6 Thin, TSOT-23-6 SOT3; SOT23; 6-TSOP SOT23; SOT-23-6 Thin, TSOT-23-6 TO-3 SOT23; SOT-23-6 Thin, TSOT-23-6
V(BR)DSS 20 volts 20 volts
PD 1140 milliwatts 1140 milliwatts
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