Manufacturer: Vishay
Win Source Part Number: 1095842-SI3460DV-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5.1A (Ta)
Gate-Source Threshold Voltage: 450mV @ 1mA (Min)
Max Gate Charge: 20nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 27 mOhm @ 5.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management
N-Channel 20V 5.1A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
MOSFET N-CH 20V 5.1A 6TSOP
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1095842-SI3460DV-T1-GE3 | SI3460DV-T1-GE3-ND | SI3460DV-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3460DV-T1-GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 20 volts | ||
| PD | 1100 milliwatts |
