Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3460DV-T1-E3 SI3460DV-T1-E3

Manufacturer: Vishay
Win Source Part Number: 028434-SI3460DV-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5.1A (Ta)
Gate-Source Threshold Voltage: 450mV @ 1mA (Min)
Max Gate Charge: 20nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 27 mOhm @ 5.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management

MOSFET N-CH 20V 5.1A 6TSOP

N-CH MOSFET 20V 5.1A 27mR TSOP Surface Mount Product overview: SI3460DV-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 5.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 5.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3460DV-T1-E3 can be used for catalog matching and distributor lookup.

N-Channel 20V 5.1A (Ta) 1.1W (Ta) Surface Mount 6-TSOP