N-channel 20 V MOSFET in a TSOP-6 package for DC/DC and boost converter applications, with a maximum drain-source on-state resistance of 0.038 Ω at 1.8 V gate voltage and a continuous drain current of 6.2 A at 25 °C. The device is halogen-free per IEC 61249-2-21 and compliant with RoHS Directive 2002/95/EC. Package dimensions are 3.05 mm by 2.85 mm with a height of 1.10 mm.
MOSFET,N CH,D-S,20V,7.9A,TSOP
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 30AC0147 |
| Product Name | Mosfet,n Ch,d-S,20V,7.9A,tsop6, Full Reel; Channel Type Vishay |
| IDSS | 7900 milliamps |
