Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3460BDV-T1-GE3 SI3460BDV-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 042594-SI3460BDV-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 3.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 24nC @ 8V Max Input Capacitance: 860pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 27 mOhm @ 5.1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 042594-SI3460BDV-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 3.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 24nC @ 8V Max Input Capacitance: 860pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 27 mOhm @ 5.1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3460BDV-T1-GE3 - 042594-SI3460BDV-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3460BDV-T1-GE3
042594-SI3460BDV-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3460BDV-T1-GE3 042594-SI3460BDV-T1-GE3
Manufacturer: Vishay Win Source Part Number: 042594-SI3460BDV-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 3.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 24nC @ 8V Max Input Capacitance: 860pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 27 mOhm @ 5.1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 042594-SI3460BDV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 24nC @ 8V
Max Input Capacitance: 860pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 27 mOhm @ 5.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI3460BDV-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI3460BDV-T1-GE3
Single FETs, MOSFETs SI3460BDV-T1-GE3
MOSFET N-CH 20V 8A 6TSOP

MOSFET N-CH 20V 8A 6TSOP

Supplier's Site Datasheet
Single FETs, MOSFETs - SI3460BDV-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3460BDV-T1-GE3DKR-ND
Single FETs, MOSFETs SI3460BDV-T1-GE3DKR-ND
N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP

N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - SI3460BDV-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3460BDV-T1-GE3CT-ND
Single FETs, MOSFETs SI3460BDV-T1-GE3CT-ND
N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP

N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - SI3460BDV-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3460BDV-T1-GE3TR-ND
Single FETs, MOSFETs SI3460BDV-T1-GE3TR-ND
N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP

N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
MOSFET 20V 8.0A 3.5W 27mohm @ 4.5V - 880-SI3460BDV-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
MOSFET 20V 8.0A 3.5W 27mohm @ 4.5V
880-SI3460BDV-T1-GE3
MOSFET 20V 8.0A 3.5W 27mohm @ 4.5V 880-SI3460BDV-T1-GE3
MOSFET 20V 8.0A 3.5W 27mohm @ 4.5V

MOSFET 20V 8.0A 3.5W 27mohm @ 4.5V

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3460BDV-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3460BDV-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3460BDV-T1-GE3
MOSFET N-CH 20V 8A 6TSOP

MOSFET N-CH 20V 8A 6TSOP

Supplier's Site
MOSFET 20V 8.0A 3.5W 27mohm @ 4.5V

MOSFET 20V 8.0A 3.5W 27mohm @ 4.5V

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 042594-SI3460BDV-T1-GE3 SI3460BDV-T1-GE3 SI3460BDV-T1-GE3DKR-ND 880-SI3460BDV-T1-GE3 SI3460BDV-T1-GE3 SI3460BDV-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3460BDV-T1-GE3 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET 20V 8.0A 3.5W 27mohm @ 4.5V Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 20 volts 20 volts 20 volts
PD 2000 to 3500 milliwatts 2000 milliwatts 2000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT23; 6-TSOP SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23; SOT-23-6 Thin, TSOT-23-6
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