Vishay Intertechnology, Inc. Single FETs, MOSFETs SI3460BDV-T1-E3

N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP

N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP

N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP

N-Channel MOSFET, 20V, 6.7A, 27mR Rds On, TSOP Product overview: SI3460BDV-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, 6.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6.7A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI3460BDV-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 8A 6TSOP

Manufacturer: Vishay
Win Source Part Number: 042593-SI3460BDV-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 24nC @ 8V
Max Input Capacitance: 860pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 27 mOhm @ 5.1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance