P-Channel 60V 2.9A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP
P-Channel 60V 2.9A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP
P-Channel 60V 2.9A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP
MOSFET P-CH 60V 2.9A 6TSOP
P-CH JFET, -60V, 2.2A, 216mR, TSOP, Surface Mount Product overview: SI3459BDV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, -60V, 2.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -60V, 2.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3459BDV-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 064452-SI3459BDV-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.9A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 350pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 216 mOhm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
MOSFET -60V Vds 20V Vgs TSOP-6
P CHANNEL MOSFET, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; No. of Pins:6PinsRoHS Compliant: Yes
P CH MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:2W RoHS Compliant: Yes
MOSFET P-CH 60V 2.9A 6TSOP
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI3459BDV-T1-GE3CT-ND | SI3459BDV-T1-GE3 | 278-SI3459BDV-T1-GE3 | 064452-SI3459BDV-T1-GE3 | SI3459BDV-T1-GE3 | 15R4948 | 84R8040 | SI3459BDV-T1-GE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | SMD -60V 2.2A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3459BDV-T1-GE3 | MOSFET | P Channel Mosfet, Full Reel; Channel Type Vishay | P Ch Mosfet; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| Package Type | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; SOT23; 6-TSOP | TO-3 | TO-3 | Surface Mount | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | 60 volts |
