P-CH MOSFET 60V 2.2A 216mR TSOP Surface Mount Product overview: SI3459BDV-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 60V, 2.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 60V, 2.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3459BDV-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 60V 2.9A 6TSOP
Manufacturer: Vishay
Win Source Part Number: 1095840-SI3459BDV-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.9A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 350pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 216 mOhm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient
P-Channel 60V 2.9A (Tc) 3.3W (Tc) Surface Mount 6-TSOP
P-Channel 60V 2.9A (Tc) 3.3W (Tc) Surface Mount 6-TSOP
P-Channel 60V 2.9A (Tc) 3.3W (Tc) Surface Mount 6-TSOP
MOSFET -60V Vds 20V Vgs TSOP-6
MOSFET P-CH 60V 2.9A 6TSOP
P CHANNEL MOSFET, -60V, 2.9A, TSOP, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI3459BDV-T1-E3 | SI3459BDV-T1-E3 | 1095840-SI3459BDV-T1-E3 | SI3459BDV-T1-E3CT-ND | SI3459BDV-T1-E3 | SI3459BDV-T1-E3 | 16P3719 |
| Product Name | SMD 60V 2.2A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3459BDV-T1-E3 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -60V, 2.9A, Tsop, Full Reel; Channel Type Vishay |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| PD | 2000 milliwatts | 3300 milliwatts | 2000 to 3300 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
