Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3458DV-T1 SI3458DV-T1

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1142695-SI3458DV-T1
Drain to Source Voltage (Vdss): 60 V
Power Dissipation: 2 W
Weight: 19.986414 mg
Number of Channels: 1
Rise Time: 10 ns
Fall Time: 10 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TSOP
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
RoHS: Non-Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 2 W
Turn-On Delay Time: 10 ns
Max Operating Temperature: 150 °C
Continuous Drain Current (ID): 3.2 A
Drain to Source Breakdown Voltage: 60 V
Turn-Off Delay Time: 20 ns
Drain to Source Resistance: 100 mΩ
Gate to Source Voltage (Vgs): 20 V

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Product overview: SI3458DV-T1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI3458DV-T1 can be used for catalog matching and distributor lookup.