MOSFET N-CH 60V 4.1A 6TSOP
N-Channel JFET, 60V, 3.2A, 100mR Rds(on), TSOP, Surface Mount Product overview: SI3458BDV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 60V, 3.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 60V, 3.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3458BDV-T1-GE3
N-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP
N-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP
N-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP
Manufacturer: Vishay
Win Source Part Number: 1095838-SI3458BDV-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Family Name: Si3458BDV
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4.1A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 350pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 3.2A, 10V
Alternative Parts (Cross-Reference): CPH6445-TL-E; CPH6445-TL-W; UZXMN6A08E6TA ; CPH6444-TL-E; Si3458BDV; SI3458DV-T3;
Introduction Date: December 11, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
MOSFET N-CH 60V 4.1A 6TSOP
MOSFET 60V 4.1A 3.3W 100mohm @ 10V
N CH MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:2W RoHS Compliant: Yes
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:2W RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI3458BDV-T1-GE3 | 278-SI3458BDV-T1-GE3 | SI3458BDV-T1-GE3TR-ND | 1095838-SI3458BDV-T1-GE3 | SI3458BDV-T1-GE3 | SI3458BDV-T1-GE3 | 15R4946 | 84R8039 |
| Product Name | Single FETs, MOSFETs | N-Channel SMD 60V 3.2A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3458BDV-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Ch Mosfet, Full Reel; Channel Type Vishay | N Channel Mosfet; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| IDSS | 4100 milliamps | 3200 milliamps | 3200 milliamps |