Vishay Intertechnology, Inc. Single FETs, MOSFETs SI3458BDV-T1-GE3

Description
N-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP
Request a Quote Datasheet
Description
N-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI3458BDV-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3458BDV-T1-GE3TR-ND
Single FETs, MOSFETs SI3458BDV-T1-GE3TR-ND
N-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP

N-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - SI3458BDV-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3458BDV-T1-GE3CT-ND
Single FETs, MOSFETs SI3458BDV-T1-GE3CT-ND
N-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP

N-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Single FETs, MOSFETs - SI3458BDV-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI3458BDV-T1-GE3DKR-ND
Single FETs, MOSFETs SI3458BDV-T1-GE3DKR-ND
N-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP

N-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP

Buy Now Datasheet
Singapore
N-Channel SMD 60V 3.2A MOSFET Transistor
278-SI3458BDV-T1-GE3
N-Channel SMD 60V 3.2A MOSFET Transistor 278-SI3458BDV-T1-GE3
N-Channel JFET, 60V, 3.2A, 100mR Rds(on), TSOP, Surface Mount Product overview: SI3458BDV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 60V, 3.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 60V, 3.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3458BDV-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel JFET, 60V, 3.2A, 100mR Rds(on), TSOP, Surface Mount Product overview: SI3458BDV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 60V, 3.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 60V, 3.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3458BDV-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3458BDV-T1-GE3 - 1095838-SI3458BDV-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3458BDV-T1-GE3
1095838-SI3458BDV-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3458BDV-T1-GE3 1095838-SI3458BDV-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1095838-SI3458BDV-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Family Name: Si3458BDV Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 4.1A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 350pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 3.2A, 10V Alternative Parts (Cross-Reference): CPH6445-TL-E; CPH6445-TL-W; UZXMN6A08E6TA ; CPH6444-TL-E; Si3458BDV; SI3458DV-T3; Introduction Date: December 11, 2007 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1095838-SI3458BDV-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Family Name: Si3458BDV
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4.1A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 350pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 3.2A, 10V
Alternative Parts (Cross-Reference): CPH6445-TL-E; CPH6445-TL-W; UZXMN6A08E6TA ; CPH6444-TL-E; Si3458BDV; SI3458DV-T3;
Introduction Date: December 11, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI3458BDV-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI3458BDV-T1-GE3
Single FETs, MOSFETs SI3458BDV-T1-GE3
MOSFET N-CH 60V 4.1A 6TSOP

MOSFET N-CH 60V 4.1A 6TSOP

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI3458BDV-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI3458BDV-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI3458BDV-T1-GE3
MOSFET N-CH 60V 4.1A 6TSOP

MOSFET N-CH 60V 4.1A 6TSOP

Supplier's Site
N Ch Mosfet, Full Reel; Channel Type Vishay - 15R4946 - Newark, An Avnet Company
Chicago, IL, United States
N Ch Mosfet, Full Reel; Channel Type Vishay
15R4946
N Ch Mosfet, Full Reel; Channel Type Vishay 15R4946
N CH MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:2W RoHS Compliant: Yes

N CH MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:2W RoHS Compliant: Yes

Supplier's Site
N Channel Mosfet; Channel Type Vishay - 84R8039 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet; Channel Type Vishay
84R8039
N Channel Mosfet; Channel Type Vishay 84R8039
N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:2W RoHS Compliant: Yes

N CHANNEL MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:2W RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET 60V 4.1A 3.3W 100mohm @ 10V

MOSFET 60V 4.1A 3.3W 100mohm @ 10V

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI3458BDV-T1-GE3TR-ND 278-SI3458BDV-T1-GE3 1095838-SI3458BDV-T1-GE3 SI3458BDV-T1-GE3 SI3458BDV-T1-GE3 15R4946 84R8039 SI3458BDV-T1-GE3
Product Name Single FETs, MOSFETs N-Channel SMD 60V 3.2A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3458BDV-T1-GE3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Ch Mosfet, Full Reel; Channel Type Vishay N Channel Mosfet; Channel Type Vishay MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type SOT23; SOT-23-6 Thin, TSOT-23-6 SOT3; SOT23; 6-TSOP SOT23; SOT-23-6 Thin, TSOT-23-6 SOT23; SOT-23-6 Thin, TSOT-23-6 TO-3 TO-3
PD 2000 milliwatts 2000 to 3300 milliwatts 2000 milliwatts 2000 milliwatts 2000 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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