Manufacturer: Vishay
Win Source Part Number: 1095839-SI3458BDV-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4.1A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 350pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 3.2A, 10V
Alternative Parts (Cross-Reference): ZXMN6A08E6TA; CPH6444-TL-E; CPH6444-TL-W;
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
N-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP
N-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP
N-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP
N-Channel JFET, 60V, 4.1A, 100mR, TSOP, Surface Mount Product overview: SI3458BDV-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 60V, 4.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 60V, 4.1A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI3458BDV-T1-E3
N CHANNEL MOSFET, 60V, 4.1A, TSOP; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET 60V 4.1A 3.3W 100mohm @ 10V
MOSFET N-CH 60V 4.1A 6-TSOP
MOSFET N-CH 60V 4.1A 6TSOP
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1095839-SI3458BDV-T1-E3 | SI3458BDV-T1-E3CT-ND | 2088-SI3458BDV-T1-E3 | 16P3718 | SI3458BDV-T1-E3 | 880-SI3458BDV-T1-E3 | SI3458BDV-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3458BDV-T1-E3 | Single FETs, MOSFETs | N-Channel SMD 60V 4.1A MOSFET Transistor | N Channel Mosfet, 60V, 4.1A, Tsop; Channel Type Vishay | MOSFET | MOSFET N-CH 60V 4.1A 6-TSOP | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 60 volts | 60 volts | |||||
| PD | 2000 to 3300 milliwatts | 2000 milliwatts | 2000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; SOT23; 6-TSOP | SOT23; SOT-23-6 Thin, TSOT-23-6 | TO-3 | 350 pF @ 30 V |
