Manufacturer: Vishay
Win Source Part Number: 028432-SI3457CDV-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2W (Ta), 3W (Tc)
Family Name: Si3457CDV
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.1A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 450pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 74 mOhm @ 4.1A, 10V
Introduction Date: July 29, 2008
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient
P-Channel 30V 5.1A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP
P-Channel 30V 5.1A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP
P-Channel 30V 5.1A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP
P-CH MOSFET, -30V, 5.1A, 74mR Rds On, TSOP Product overview: SI3457CDV-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -30V, 5.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, 5.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI3457CDV-T1-GE3
MOSFET P-CH 30V 5.1A 6TSOP
MOSFET -30V Vds 20V Vgs TSOP-6
MOSFET P-CH 30V 5.1A 6TSOP
MOSFET, P-CH, -30V, -5.1A, 150DEG C, 3W; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:-RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028432-SI3457CDV-T1-GE3 | SI3457CDV-T1-GE3TR-ND | 278-SI3457CDV-T1-GE3 | SI3457CDV-T1-GE3 | SI3457CDV-T1-GE3 | SI3457CDV-T1-GE3 | 70AC6500 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI3457CDV-T1-GE3 | Single FETs, MOSFETs | -30V 5.1A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -30V, -5.1A, 150Deg C, 3W; Channel Type Vishay |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | |||||
| PD | 2000 to 3000 milliwatts | 2000 milliwatts | 2000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
